Inventor · disambiguated record
Shih-Chang Liu
Also filed as: LIU SHIH-CHANG
300 granted patents·19 pending applications·1,323 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD259TAIWAN SEMICONDUCTOR MFG37SHEN MING-HUEI3HUANG WEI-HANG2INT POWER DEVICES INC2
Top patents by PatentIndex Score
319 records- 0199US11361971B2High aspect ratio Bosch deep etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·5 cites·20 claims
- 0299US9818935B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·67 cites·20 claims
- 0399US9564577B1MRAM device and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·69 cites·20 claims
- 0499US9431603B1RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·61 cites·20 claims
- 0598US11973149B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·2 cites·20 claims
- 0698US11575052B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·4 cites·15 claims
- 0798US10734394B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 4, 2020·5 cites·20 claims
- 0898US10270025B2Semiconductor structure having magnetic tunneling junction (MTJ) layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·20 cites·20 claims
- 0998US9653682B1Resistive random access memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·22 cites·20 claims
- 1098US8872149B1RRAM structure and process using composite spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·61 cites·20 claims
- 1197US11581484B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·2 cites·20 claims
- 1297US10573811B2Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 25, 2020·16 cites·20 claims
- 1397US10134748B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·14 cites·20 claims
- 1497US9991333B1Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·19 cites·20 claims
- 1597US9917165B2Memory cell structure for improving erase speedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 13, 2018·28 cites·20 claims
- 1697US9711713B1Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·14 cites·18 claims
- 1797US9583591B2Si recess method in HKMG replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·20 cites·20 claims
- 1897US9559294B2Self-aligned magnetoresistive random-access memory (MRAM) structure for process damage minimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·24 cites·20 claims
- 1997US9543511B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·22 cites·20 claims
- 2097US9209392B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 8, 2015·33 cites·20 claims
- 2196US10510952B2Storage device with composite spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·10 cites·20 claims
- 2296US10454021B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 22, 2019·12 cites·19 claims
- 2396US10049890B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·15 cites·20 claims
- 2496US9853091B2Side bottom contact RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·16 cites·20 claims
- 2596US9570454B2Structure with emedded EFS3 and FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·15 cites·20 claims
- 2696US9196825B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 24, 2015·13 cites·20 claims
- 2796US9040951B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·13 cites·16 claims
- 2895US11839161B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·2 cites·20 claims
- 2995US9685604B2Magnetoresistive random access memory cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 20, 2017·13 cites·20 claims
- 3095US9614048B2Split gate flash memory structure and method of making the split gate flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·13 cites·15 claims
- 3195US9536969B2Self-aligned split gate flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 3, 2017·22 cites·20 claims
- 3295US9178144B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 3, 2015·25 cites·20 claims
- 3394US10804411B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·6 cites·20 claims
- 3494US9865610B2Si recess method in HKMG replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·9 cites·20 claims
- 3593US10529916B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·6 cites·20 claims
- 3693US10509169B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·8 cites·20 claims
- 3793US10032828B2Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·12 cites·19 claims
- 3893US10003022B2RRAM cell structure with conductive etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 19, 2018·8 cites·20 claims
- 3993US9711508B2Capacitor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·9 cites·19 claims
- 4093US9567207B2Recess with tapered sidewalls for hermetic seal in MEMS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·7 cites·20 claims
- 4193US7253470B1Floating gate with unique profile by means of undercutting for split-gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 7, 2007·27 cites·11 claims
- 4293US2025359086A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4392US10535671B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·5 cites·20 claims
- 4492US10535814B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·6 cites·14 claims
- 4592US9847473B2MRAM structure for process damage minimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 19, 2017·9 cites·20 claims
- 4691US11871686B2Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·1 cites·20 claims
- 4791US11800822B2Memory device with composite spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 4891US9837605B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 5, 2017·6 cites·23 claims
- 4991US9728719B2Leakage resistant RRAM/MIM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 8, 2017·6 cites·20 claims
- 5091US9620372B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·6 cites·20 claims
Showing the top 50 of 319 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →