Inventor · disambiguated record
Shaun Mills
Also filed as: MILLS SHAUN · MILLS SHAUN ALAN
1 granted patent·35 pending applications·0 citations·filing 2021–2025
13Inventor score
Files withINTEL CORP36
Top patents by PatentIndex Score
36 records- 0165US2025221041A1Integrated circuit structure with front-side-guided backside source or drain contactINTEL CORP·Filed 2023·Application pending·0 cites
- 0264US12484247B2Gate-all-around integrated circuit structures having backside contact with enhanced area relative to epitaxial sourceINTEL CORP·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 0363US2025228008A1Integrated circuit structure with front-side-guided backside source or drain contactINTEL CORP·Filed 2025·Application pending·0 cites
- 0457US2025311329A1Integrated circuit structures having bidirectional backside interconnectsINTEL CORP·Filed 2024·Application pending·0 cites
- 0556US2025311296A1Integrated circuit structure with direct backside source or drain contact and reduced gate depthINTEL CORP·Filed 2024·Application pending·0 cites
- 0656US2025309131A1Integrated circuit structure with backside source or drain contact selectivity using colored hardmasksINTEL CORP·Filed 2024·Application pending·0 cites
- 0755US2025218869A1Self-aligned back-side gate viasINTEL CORP·Filed 2023·Application pending·0 cites
- 0855US2025107183A1Integrated circuit structure with differentiated source or drain structuresINTEL CORP·Filed 2023·Application pending·0 cites
- 0955US2025218937A1Directed self assembly-enabled back-side contact arrays aligned to gate electrodesINTEL CORP·Filed 2023·Application pending·0 cites
- 1055US2025221020A1Double-sided device contacts and through vias for performance and layout benefitsINTEL CORP·Filed 2023·Application pending·0 cites
- 1154US2025221040A1Integrated circuit structure with front-side-cut backside source or drain contactINTEL CORP·Filed 2023·Application pending·0 cites
- 1253US2025220991A1Integrated circuit structure with direct backside source or drain contactINTEL CORP·Filed 2023·Application pending·0 cites
- 1353US2024405085A1Integrated circuit structure with backside contact stitchingINTEL CORP·Filed 2023·Application pending·0 cites
- 1453US2025218901A1Backside contact placeholder formation with improved process controlINTEL CORP·Filed 2023·Application pending·0 cites
- 1553US2025220994A1Backside epitaxial growth for improved contact areaINTEL CORP·Filed 2023·Application pending·0 cites
- 1653US2025393251A1Integrated circuit structure with backside conductive feed-throughINTEL CORP·Filed 2024·Application pending·0 cites
- 1752US2025220950A1Transistors with asymmetric source and drain contactsINTEL CORP·Filed 2023·Application pending·0 cites
- 1852US2025220978A1Integrated circuit structure with asymmetric epitaxial source or drain arrangementsINTEL CORP·Filed 2023·Application pending·0 cites
- 1952US2024421153A1Integrated circuit structure with backside contact reveal uniformityINTEL CORP·Filed 2023·Application pending·0 cites
- 2052US2024429291A1Integrated circuit structure with backside source or drain contact selectivityINTEL CORP·Filed 2023·Application pending·0 cites
- 2152US2025006568A1Integrated circuit structures having alternative carriers for dual-sided devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 2252US2025113580A1Backside source/drain transistor contact flow with selective etch materials for robust connectivityINTEL CORP·Filed 2023·Application pending·0 cites
- 2351US2024332064A1Back side interconnect patterning and front side metal interconnect on a transistor layerINTEL CORP·Filed 2023·Application pending·0 cites
- 2451US2024332077A1Integrated circuit structure with backside gate connectionINTEL CORP·Filed 2023·Application pending·0 cites
- 2551US2024313096A1Integrated circuit structure with back-side contact selectivityINTEL CORP·Filed 2023·Application pending·0 cites
- 2651US2024332377A1Integrated circuit structure with backside source or drain contact selectivityINTEL CORP·Filed 2023·Application pending·0 cites
- 2751US2025220959A1Front side and backside source or drain contactsINTEL CORP·Filed 2023·Application pending·0 cites
- 2850US2024332172A1Integrated circuit structure with backside contact wideningINTEL CORP·Filed 2023·Application pending·0 cites
- 2948US2023317850A1Non-epitaxial electrical coupling between a front side trench connector and back side contacts of a transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 3048US2024429294A1Integrated circuit structure with backside plug last approachINTEL CORP·Filed 2023·Application pending·0 cites
- 3148US2023197714A1Gate-all-around integrated circuit structures having backside contact self-aligned to epitaxial sourceINTEL CORP·Filed 2021·Application pending·0 cites
- 3248US2024332302A1Integrated circuit structures with backside conductive source or drain contact having enhanced contact areaINTEL CORP·Filed 2023·Application pending·0 cites
- 3347US2024332379A1Backside contact etch before cavity spacer formation for backside contact of transistor source/drainINTEL CORP·Filed 2023·Application pending·0 cites
- 3447US2025006740A1Integrated circuit structure with backside source or drain contact differentiated accessINTEL CORP·Filed 2023·Application pending·0 cites
- 3544US2023317809A1Selective passivation for epi growth in presence of metallic contactsINTEL CORP·Filed 2022·Application pending·0 cites
- 3632US2023317803A1Transistor backside routing layers with contacts having varying depthsINTEL CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →