Inventor · disambiguated record
Shinichi Minami
Also filed as: MINAMI SHINICHI
36 granted patents·2 pending applications·633 citations·filing 1979–2018
98Inventor score
Files withHITACHI LTD18RENESAS TECH CORP10RENESAS ELECTRONICS CORP6HITACHI ULSI SYS CO LTD1HITACHI VLSI1
Top patents by PatentIndex Score
38 records- 0196US8017986B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Sep 13, 2011·22 cites·21 claims
- 0296US7414283B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Aug 19, 2008·29 cites·2 claims
- 0395US7700992B2Semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Apr 20, 2010·23 cites·14 claims
- 0495US7057230B2Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speedHITACHI ULSI SYS CO LTD·Filed 2002·Granted Jun 6, 2006·65 cites·21 claims
- 0593US6531735B1Semiconductor integrated circuitHITACHI LTD·Filed 2000·Granted Mar 11, 2003·67 cites·4 claims
- 0693US5355330ACapacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrodeHITACHI LTD·Filed 1992·Granted Oct 11, 1994·115 cites·14 claims
- 0788US4514830ADefect-remediable semiconductor integrated circuit memory and spare substitution method in the sameHITACHI LTD·Filed 1982·Granted Apr 30, 1985·46 cites·15 claims
- 0881US7011999B2Method of manufacturing an integrated circuit device including forming an oxidation resistant film over an isolation region and subsequently forming a gate insulating film of a misfetRENESAS TECH CORP·Filed 2003·Granted Mar 14, 2006·33 cites·14 claims
- 0979US7611942B2Semiconductor integrated circuit device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Nov 3, 2009·10 cites·13 claims
- 1079US4586238AMethod of manufacturing field-effect transistors utilizing self-aligned techniquesHITACHI LTD·Filed 1983·Granted May 6, 1986·24 cites·9 claims
- 1177US9812211B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 7, 2017·1 cites·6 claims
- 1277US8698224B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 15, 2014·2 cites·21 claims
- 1377US8426904B2Semiconductor deviceTANAKA TOSHIHIRO·Filed 2011·Granted Apr 23, 2013·2 cites·14 claims
- 1477US7012296B2Semiconductor integrated circuitRENESAS TECH CORP·Filed 2005·Granted Mar 14, 2006·11 cites·6 claims
- 1577US6653685B2Nonvolatile memory deviceHITACHI LTD·Filed 2001·Granted Nov 25, 2003·17 cites·15 claims
- 1672US4264376AMethod for producing a nonvolatile memory deviceHITACHI LTD·Filed 1979·Granted Apr 28, 1981·26 cites·18 claims
- 1770US4668970ASemiconductor deviceHITACHI LTD·Filed 1985·Granted May 26, 1987·27 cites·5 claims
- 1869US7190023B2Semiconductor integrated circuit having discrete trap type memory cellsRENESAS TECH CORP·Filed 2005·Granted Mar 13, 2007·4 cites·13 claims
- 1968US4851364AMethod of forming well regions for field effect transistors utilizing self-aligned techniquesHITACHI LTD·Filed 1986·Granted Jul 25, 1989·19 cites·64 claims
- 2066US10354735B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·0 cites·6 claims
- 2166US6674122B2Semiconductor integrated circuitHITACHI LTD·Filed 2003·Granted Jan 6, 2004·9 cites·5 claims
- 2265US10115469B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·6 claims
- 2364US6894344B2Semiconductor integrated circuit having two switch transistors formed between two diffusion-layer linesRENESAS TECH CORP·Filed 2003·Granted May 17, 2005·8 cites·6 claims
- 2459US9412459B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 9, 2016·0 cites·2 claims
- 2559US4460980ANonvolatile MNOS semiconductor memoryHITACHI LTD·Filed 1980·Granted Jul 17, 1984·13 cites·20 claims
- 2654US6936888B2Nonvolatile memory device with multi-bit memory cells having plural side gatesRENESAS TECH CORP·Filed 2003·Granted Aug 30, 2005·4 cites·15 claims
- 2752US6803644B2Semiconductor integrated circuit device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Oct 12, 2004·5 cites·20 claims
- 2851US7064090B2Method of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 2004·Granted Jun 20, 2006·4 cites·24 claims
- 2948US7166508B2Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)RENESAS TECH CORP·Filed 2004·Granted Jan 23, 2007·2 cites·14 claims
- 3044US4654828ANonvolatile semiconductor memoryHITACHI LTD·Filed 1985·Granted Mar 31, 1987·8 cites·8 claims
- 3141US6590809B2Non-volatile semiconductor memory deviceHITACHI LTD·Filed 2002·Granted Jul 8, 2003·3 cites·3 claims
- 3241US5348898ASemiconductor device and method for manufacturing the sameHITACHI LTD·Filed 1993·Granted Sep 20, 1994·8 cites·14 claims
- 3339US5252505AMethod for manufacturing a semiconductor deviceHITACHI LTD·Filed 1992·Granted Oct 12, 1993·10 cites·21 claims
- 3439US5114870AMethod for manufacturing field effect transistorsHITACHI LTD·Filed 1989·Granted May 19, 1992·5 cites·40 claims
- 3539US2003017672A1Nonvolatile memory deviceHITACHI LTD·Filed 2002·Application pending·0 cites
- 3636US5519244ASemiconductor device having aligned semiconductor regions and a plurality of MISFETsHITACHI LTD·Filed 1994·Granted May 21, 1996·5 cites·16 claims
- 3731US2006133146A1Semiconductor device and a method of manufacturing the sameMAEKAWA KEIICHI·Filed 2005·Application pending·0 cites
- 3830US5038193ASemiconductor integrated circuit deviceHITACHI VLSI·Filed 1990·Granted Aug 6, 1991·6 cites·21 claims
Join the waitlist — get patent alerts
Get an alert when Shinichi Minami files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →