Inventor · disambiguated record
Shuji Nakamura
Also filed as: NAKAMURA SHUJI
356 granted patents·124 pending applications·13,938 citations·filing 1978–2025
99Inventor score
Top patents by PatentIndex Score
480 records- 0199US7818495B2Storage device and deduplication methodHITACHI LTD·Filed 2008·Granted Oct 19, 2010·116 cites·18 claims
- 0299US6711191B1Nitride semiconductor laser deviceNICHIA CORP·Filed 2000·Granted Mar 23, 2004·179 cites·16 claims
- 0399US5578839ALight-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1993·Granted Nov 26, 1996·429 cites·39 claims
- 0499US5563422AGallium nitride-based III-V group compound semiconductor device and method of producing the sameNICHIA KAGAKU KOGYO KK·Filed 1994·Granted Oct 8, 1996·440 cites·49 claims
- 0598US11784454B1High intensity pulse laser generation system and methodBLUE LASER FUSION INC·Filed 2022·Granted Oct 10, 2023·5 cites·22 claims
- 0698US8835959B2Transparent light emitting diodesUNIV CALIFORNIA·Filed 2012·Granted Sep 16, 2014·33 cites·28 claims
- 0798US8372204B2Susceptor for MOCVD reactorCREE INC·Filed 2006·Granted Feb 12, 2013·549 cites·16 claims
- 0898US8156279B2Storage device and deduplication methodTANAKA KATSUYA·Filed 2010·Granted Apr 10, 2012·75 cites·14 claims
- 0998US8082389B2Apparatus and method for mirroring data between nonvolatile memory and a hard disk driveFUJIBAYASHI AKIRA·Filed 2009·Granted Dec 20, 2011·93 cites·8 claims
- 1098US7868341B2Optical designs for high-efficacy white-light emitting diodesUNIV CALIFORNIA·Filed 2008·Granted Jan 11, 2011·63 cites·29 claims
- 1198US7761655B2Storage system and method of preventing deterioration of write performance in storage systemHITACHI LTD·Filed 2008·Granted Jul 20, 2010·111 cites·17 claims
- 1298US7709284B2Method for deposition of magnesium doped (Al, In, Ga, B)N layersUNIV CALIFORNIA·Filed 2007·Granted May 4, 2010·166 cites·20 claims
- 1398US7704763B2Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surfaceUNIV CALIFORNIA·Filed 2003·Granted Apr 27, 2010·170 cites·14 claims
- 1498US7691658B2Method for improved growth of semipolar (Al,In,Ga,B)NUNIV CALIFORNIA·Filed 2007·Granted Apr 6, 2010·266 cites·26 claims
- 1598US7574554B2Storage system and data protection method thereforHITACHI LTD·Filed 2006·Granted Aug 11, 2009·139 cites·15 claims
- 1698US7338828B2Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)UNIV CALIFORNIA·Filed 2006·Granted Mar 4, 2008·324 cites·11 claims
- 1798US7335920B2LED with current confinement structure and surface rougheningCREE INC·Filed 2005·Granted Feb 26, 2008·168 cites·26 claims
- 1898US7220324B2Technique for the growth of planar semi-polar gallium nitrideUNIV CALIFORNIA·Filed 2006·Granted May 22, 2007·317 cites·18 claims
- 1998US7211822B2Nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2005·Granted May 1, 2007·55 cites·7 claims
- 2098US7208393B2Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2005·Granted Apr 24, 2007·104 cites·19 claims
- 2198US7186302B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Mar 6, 2007·87 cites·20 claims
- 2298US6831629B2Pointing deviceNAGANO FUJITSU COMPONENT LTD·Filed 2002·Granted Dec 14, 2004·1.4k cites·31 claims
- 2398US6172382B1Nitride semiconductor light-emitting and light-receiving devicesNICHIA KAGAKU KOGYO KK·Filed 1998·Granted Jan 9, 2001·501 cites·7 claims
- 2498US6153010AMethod of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1998·Granted Nov 28, 2000·872 cites·30 claims
- 2598US5959307ANitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1996·Granted Sep 28, 1999·319 cites·38 claims
- 2698US5777350ANitride semiconductor light-emitting deviceNICHIA KAGAKU KOGYO KK·Filed 1995·Granted Jul 7, 1998·474 cites·21 claims
- 2798US5767581AGallium nitride-based III-V group compound semiconductorNICHIA KAGAKU KOGYO KK·Filed 1996·Granted Jun 16, 1998·171 cites·37 claims
- 2898US5747832ALight-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1996·Granted May 5, 1998·173 cites·9 claims
- 2998US5652434AGallium nitride-based III-V group compound semiconductorNICHIA KAGAKU KOGYO KK·Filed 1996·Granted Jul 29, 1997·184 cites·12 claims
- 3098US5306662AMethod of manufacturing P-type compound semiconductorNICHIA KAGAKU KOGYO KK·Filed 1992·Granted Apr 26, 1994·304 cites·8 claims
- 3198US5290393ACrystal growth method for gallium nitride-based compound semiconductorNICHIA KAGAKU KOGYO KK·Filed 1992·Granted Mar 1, 1994·457 cites·16 claims
- 3297US10217916B2Transparent light emitting diodesUNIV CALIFORNIA·Filed 2014·Granted Feb 26, 2019·19 cites·26 claims
- 3397US7122844B2Susceptor for MOCVD reactorCREE INC·Filed 2002·Granted Oct 17, 2006·335 cites·25 claims
- 3497US6610995B2Gallium nitride-based III-V group compound semiconductorNICHIA CORP·Filed 2002·Granted Aug 26, 2003·94 cites·18 claims
- 3597US5877558AGallium nitride-based III-V group compound semiconductorNICHIA KAGAKU KOGYO KK·Filed 1997·Granted Mar 2, 1999·140 cites·5 claims
- 3697US5734182ALight-emitting gallium nitride-based compound semiconducor deviceNICHIA KAGAKU KOGYO KK·Filed 1996·Granted Mar 31, 1998·115 cites·9 claims
- 3796US8847249B2Solid-state optical device having enhanced indium content in active regionsRARING JAMES W·Filed 2009·Granted Sep 30, 2014·46 cites·21 claims
- 3896US7846757B2Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2006·Granted Dec 7, 2010·33 cites·23 claims
- 3996US7687813B2Standing transparent mirrorless light emitting diodeUNIV CALIFORNIA·Filed 2007·Granted Mar 30, 2010·33 cites·32 claims
- 4096US7682944B2Pendeo epitaxial structures and devicesCREE INC·Filed 2007·Granted Mar 23, 2010·37 cites·34 claims
- 4196US7669019B2Apparatus and method of mirroring data between nonvolatile memory and hard diskHITACHI LTD·Filed 2006·Granted Feb 23, 2010·50 cites·16 claims
- 4296US7496124B2Nitride semiconductor laser deviceNICHIA CORP·Filed 2005·Granted Feb 24, 2009·33 cites·8 claims
- 4396US7464221B2Storage system, storage device, and control method thereofHITACHI LTD·Filed 2005·Granted Dec 9, 2008·49 cites·3 claims
- 4496US7442254B2Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layerNICHIA CORP·Filed 2006·Granted Oct 28, 2008·26 cites·18 claims
- 4596US7220658B2Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2003·Granted May 22, 2007·105 cites·21 claims
- 4696US6791103B2Light-emitting gallium nitride-based compound semiconductor deviceNICHIA CORP·Filed 2002·Granted Sep 14, 2004·45 cites·9 claims
- 4796US6756611B2Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2002·Granted Jun 29, 2004·87 cites·11 claims
- 4896US5334277AMethod of vapor-growing semiconductor crystal and apparatus for vapor-growing the sameNICHIA KAGAKY KOGYO K K·Filed 1991·Granted Aug 2, 1994·358 cites·17 claims
- 4995US10658557B1Transparent light emitting device with light emitting diodesUNIV CALIFORNIA·Filed 2019·Granted May 19, 2020·7 cites·2 claims
- 5095US10205300B1Gallium and nitrogen containing laser diode dazzling devices and methods of useSORAA LASER DIODE INC·Filed 2015·Granted Feb 12, 2019·14 cites·24 claims
Showing the top 50 of 480 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →