Inventor · disambiguated record
Sheyang Ning
Also filed as: NING SHEYANG
26 granted patents·10 pending applications·19 citations·filing 2017–2025
92Inventor score
Top patents by PatentIndex Score
36 records- 0196US11562791B1Memory devices with four data line bias levelsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 24, 2023·6 cites·24 claims
- 0294US12014778B2In-line programming adjustment of a memory cell in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
- 0394US11462281B1Intervallic dynamic start voltage and program verify sampling in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 4, 2022·5 cites·20 claims
- 0481US12254927B2In-line programming adjustment of a memory cell in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 0580US10446228B2Devices and methods for programming resistive change elementsNANTERO INC·Filed 2017·Granted Oct 15, 2019·4 cites·20 claims
- 0679US2025191659A1Level shifting in all levels programming of a memory device in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0778US2025292829A1Managing a maximum program voltage level during all levels programming of a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0875US12444453B2Volatile data storage in NAND memoryMICRON TECHNOLOGY INC·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 0972US12260914B2Level shifting in all levels programming of a memory device in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 1072US11887668B2All levels programming of a memory device in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 1171US12141445B2Managing dielectric stress of a memory device using controlled ramping slopesMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1271US11915758B2Memory devices with four data line bias levelsMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 1371US10261861B2Methods for error correction with resistive change element arraysNANTERO INC·Filed 2017·Granted Apr 16, 2019·1 cites·20 claims
- 1470US12112819B2Apparatus for determining memory cell data statesMICRON TECHNOLOGY INC·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1569US12469565B2Fast bit erase for upper tail tightening of threshold voltage distributionsMICRON TECHNOLOGY INC·Filed 2024·Granted Nov 11, 2025·0 cites·12 claims
- 1669US11664079B2Intervallic dynamic start voltage and program verify sampling in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted May 30, 2023·0 cites·20 claims
- 1768US12347485B2Establishing bitline, wordline and boost voltages to manage a maximum program voltage level during all levels programming of a memory deviceMICRON TECHNOLOGY INC·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 1867US2025149093A1All level coarse/fine programming of memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1966US12431198B2Charge loss acceleration during programming of memory cells in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 2065US12224012B2All level coarse/fine programming of memory cellsMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 2165US2025391477A1Memory configured to program memory cells having multiple different channel voltage levels and methods of their operationMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2264US11494084B2Managing dielectric stress of a memory device using controlled ramping slopesMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 2362US11961566B2Fast bit erase for upper tail tightening of threshold voltage distributionsMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 2460US11798647B2Apparatus and methods for determining memory cell data statesMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 24, 2023·0 cites·6 claims
- 2554US2024295970A1Program voltage selection during all levels programming of a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2653US10387244B2Methods for error correction with resistive change element arraysNANTERO INC·Filed 2017·Granted Aug 20, 2019·0 cites·34 claims
- 2753US2025124102A1Vector element multiplication in nand memoryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2853US2023397401A1Memory cell capacitor structures for three-dimensional memory arraysMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2952US12211552B2Concurrent slow-fast memory cell programmingMICRON TECHNOLOGY INC·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 3052US10825516B2Resistive change element cells sharing selection devicesNANTERO INC·Filed 2018·Granted Nov 3, 2020·1 cites·28 claims
- 3149US11742036B2Reducing maximum programming voltage in memory programming operationsMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 29, 2023·0 cites·14 claims
- 3249US11037624B2Devices for programming resistive change elements in resistive change element arraysNANTERO INC·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 3349US2024339158A1Controlling pillar voltage using wordline boost voltage and select gate leakage during all levels programming of a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3448US11749346B2Overwrite mode in memory programming operationsMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 5, 2023·0 cites·17 claims
- 3547US2023068482A1Time intervals among memory operations of non-volatile memoryMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 3646US2023207019A1Multi-level cell and multi-sub-block programming in a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →