Inventor · disambiguated record
Shigeru Nishimatsu
Also filed as: NISHIMATSU SHIGERU
26 granted patents·1,659 citations·filing 1974–1990
98Inventor score
Files withHITACHI LTD26
Top patents by PatentIndex Score
26 records- 0199US4579623AMethod and apparatus for surface treatment by plasmaHITACHI LTD·Filed 1984·Granted Apr 1, 1986·654 cites·33 claims
- 0298US4481229AMethod for growing silicon-including film by employing plasma depositionHITACHI LTD·Filed 1983·Granted Nov 6, 1984·143 cites·15 claims
- 0395US4901667ASurface treatment apparatusHITACHI LTD·Filed 1986·Granted Feb 20, 1990·103 cites·17 claims
- 0495US4522674ASurface treatment apparatusHITACHI LTD·Filed 1984·Granted Jun 11, 1985·71 cites·10 claims
- 0594US4559100AMicrowave plasma etching apparatusHITACHI LTD·Filed 1984·Granted Dec 17, 1985·43 cites·8 claims
- 0693US4609426AMethod and apparatus for monitoring etchingHITACHI LTD·Filed 1985·Granted Sep 2, 1986·63 cites·11 claims
- 0793US4433228AMicrowave plasma sourceHITACHI LTD·Filed 1981·Granted Feb 21, 1984·43 cites·20 claims
- 0889US4330384AProcess for plasma etchingHITACHI LTD·Filed 1979·Granted May 18, 1982·52 cites·28 claims
- 0984US5108778ASurface treatment methodHITACHI LTD·Filed 1990·Granted Apr 28, 1992·33 cites·25 claims
- 1084US4462863AMicrowave plasma etchingHITACHI LTD·Filed 1983·Granted Jul 31, 1984·59 cites·12 claims
- 1182US4298419ADry etching apparatusHITACHI LTD·Filed 1980·Granted Nov 3, 1981·39 cites·4 claims
- 1279US5140272AMethod of semiconductor surface measurment and an apparatus for realizing the sameHITACHI LTD·Filed 1988·Granted Aug 18, 1992·34 cites·8 claims
- 1374US4005450AInsulated gate field effect transistor having drain region containing low impurity concentration layerHITACHI LTD·Filed 1974·Granted Jan 25, 1977·19 cites·13 claims
- 1472US5138158ASurface analysis method and apparatusHITACHI LTD·Filed 1989·Granted Aug 11, 1992·29 cites·52 claims
- 1571US5108543AMethod of surface treatmentHITACHI LTD·Filed 1988·Granted Apr 28, 1992·36 cites·12 claims
- 1668US5220169ASurface analyzing method and apparatusHITACHI LTD·Filed 1990·Granted Jun 15, 1993·28 cites·40 claims
- 1768US4886571ASurface treatment and apparatus thereforHITACHI LTD·Filed 1989·Granted Dec 12, 1989·33 cites·32 claims
- 1868US4270262ASemiconductor device and process for making the sameHITACHI LTD·Filed 1978·Granted Jun 2, 1981·21 cites·15 claims
- 1967US5028778ASurface analysis method and a device thereforHITACHI LTD·Filed 1989·Granted Jul 2, 1991·23 cites·21 claims
- 2065US4705595AMethod for microwave plasma processingHITACHI LTD·Filed 1985·Granted Nov 10, 1987·32 cites·10 claims
- 2164US4624214ADry-processing apparatusHITACHI LTD·Filed 1985·Granted Nov 25, 1986·30 cites·9 claims
- 2259US4430138AMicrowave plasma etching apparatus having fan-shaped dischargeHITACHI LTD·Filed 1980·Granted Feb 7, 1984·21 cites·1 claims
- 2358US4828874ALaser surface treatment method and apparatus for practicing sameHITACHI LTD·Filed 1987·Granted May 9, 1989·23 cites·12 claims
- 2449US4451841ASemiconductor device with multi-layered electrodesHITACHI LTD·Filed 1981·Granted May 29, 1984·11 cites·22 claims
- 2543US4436581AUniform etching of silicon (doped and undoped) utilizing ionsHITACHI LTD·Filed 1982·Granted Mar 13, 1984·11 cites·11 claims
- 2636US4361949AProcess for making a memory deviceHITACHI LTD·Filed 1981·Granted Dec 7, 1982·5 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →