Inventor · disambiguated record
Shugo Nitta
Also filed as: NITTA SHUGO
7 granted patents·17 citations·filing 2009–2023
75Inventor score
Files withNATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM2UNIV NAGOYA NAT UNIV CORP2MIYAZAKI ATSUSHI1OKUNO KOJI1SHINODA DAISUKE1
Top patents by PatentIndex Score
7 records- 0186US8518806B2Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor deviceOKUNO KOJI·Filed 2009·Granted Aug 27, 2013·15 cites·29 claims
- 0267US12009206B2Vapor phase epitaxial growth deviceUNIV NAGOYA NAT UNIV CORP·Filed 2023·Granted Jun 11, 2024·0 cites·10 claims
- 0360US8765509B2Method for producing group III nitride semiconductor light-emitting deviceSHINODA DAISUKE·Filed 2011·Granted Jul 1, 2014·2 cites·12 claims
- 0452US11869767B2Gallium nitride vapor phase epitaxy apparatus used in vapor phase epitaxy not using organic metal as a gallium raw material and manufacturing method thereforNATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM·Filed 2020·Granted Jan 9, 2024·0 cites·13 claims
- 0551US11371165B2Vapor phase epitaxial growth deviceNATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM·Filed 2019·Granted Jun 28, 2022·0 cites·16 claims
- 0650US11591717B2Vapor phase epitaxial growth deviceUNIV NAGOYA NAT UNIV CORP·Filed 2018·Granted Feb 28, 2023·0 cites·14 claims
- 0747US8685775B2Group III nitride semiconductor light-emitting device and production method thereforMIYAZAKI ATSUSHI·Filed 2012·Granted Apr 1, 2014·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →