Inventor · disambiguated record
Shunsuke Noguchi
Also filed as: NOGUCHI SHUNSUKE
9 granted patents·5 pending applications·0 citations·filing 2017–2025
74Inventor score
Top patents by PatentIndex Score
14 records- 0184US2025215611A1SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATERESONAC CORP·Filed 2024·Application pending·0 cites
- 0280US12227875B2SiC wafer and SiC epitaxial waferRESONAC CORP·Filed 2023·Granted Feb 18, 2025·0 cites·10 claims
- 0367US2025154684A1SiC WAFER AND SiC EPITAXIAL WAFERRESONAC CORP·Filed 2025·Application pending·0 cites
- 0466US11027977B2Method of manufacturing tantalum carbide materialSHOWA DENKO KK·Filed 2019·Granted Jun 8, 2021·0 cites·6 claims
- 0560US11519096B2Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thicknessSHOWA DENKO KK·Filed 2019·Granted Dec 6, 2022·0 cites·8 claims
- 0659US12320306B2Electricity generation system and aircraftJAPAN AEROSPACE EXPLORATION·Filed 2022·Granted Jun 3, 2025·0 cites·12 claims
- 0758US11815437B2Method of acquiring sample for evaluation of SiC single crystalSHOWA DENKO KK·Filed 2019·Granted Nov 14, 2023·0 cites·9 claims
- 0855US11447890B2Crystal growth apparatusSHOWA DENKO KK·Filed 2019·Granted Sep 20, 2022·0 cites·14 claims
- 0954US2025357811A1Electric generator, coil element, motor, and aircraftJAPAN AEROSPACE EXPLORATION·Filed 2022·Application pending·0 cites
- 1052US10978359B2SiC substrate evaluation method, SiC epitaxial wafer manufacturing method, and SiC epitaxial waferSHOWA DENKO KK·Filed 2019·Granted Apr 13, 2021·0 cites·1 claims
- 1152US10900888B2Method for evaluating tantalum carbideSHOWA DENKO KK·Filed 2017·Granted Jan 26, 2021·0 cites·5 claims
- 1251US11905621B2SiC single crystal, method of manufacturing SiC ingot, and method of manufacturing SiC waferRESONAC CORP·Filed 2019·Granted Feb 20, 2024·0 cites·8 claims
- 1348US2021189596A1SiC SINGLE CRYSTAL, METHOD OF MANUFACTURING SiC INGOT, AND METHOD OF MANUFACTURING SiC WAFERSHOWA DENKO KK·Filed 2019·Application pending·0 cites
- 1442US2020017990A1SiC-MONOCRYSTAL GROWTH CRUCIBLESHOWA DENKO KK·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →