Inventor · disambiguated record
Shigeyuki Obinata
Also filed as: OBINATA SHIGEYUKI
6 granted patents·198 citations·filing 1992–2000
86Inventor score
Files withFUJI ELECTRIC CO LTD6
Top patents by PatentIndex Score
6 records- 0181US6323539B1High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistorFUJI ELECTRIC CO LTD·Filed 2000·Granted Nov 27, 2001·34 cites·43 claims
- 0275US6124628AHigh voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistorFUJI ELECTRIC CO LTD·Filed 1996·Granted Sep 26, 2000·52 cites·16 claims
- 0371US5341003AMOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit elementFUJI ELECTRIC CO LTD·Filed 1992·Granted Aug 23, 1994·36 cites·16 claims
- 0466US5559355AVertical MOS semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1995·Granted Sep 24, 1996·27 cites·8 claims
- 0564US5557128AInsulated-gate type bipolar transistorFUJI ELECTRIC CO LTD·Filed 1995·Granted Sep 17, 1996·24 cites·4 claims
- 0657US5530277AInsulated-gate bipolar transistorFUJI ELECTRIC CO LTD·Filed 1994·Granted Jun 25, 1996·25 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →