Inventor · disambiguated record
Shizuo Oguro
Also filed as: OGURO SHIZUO
7 granted patents·2 pending applications·441 citations·filing 1992–2003
89Inventor score
Top patents by PatentIndex Score
9 records- 0192US5798544ASemiconductor memory device having trench isolation regions and bit lines formed thereoverNEC CORP·Filed 1994·Granted Aug 25, 1998·105 cites·8 claims
- 0287US5443661ASOI (silicon on insulator) substrate with enhanced gettering effectsNEC CORP·Filed 1994·Granted Aug 22, 1995·107 cites·11 claims
- 0387US5242855AMethod of fabricating a polycrystalline silicon film having a reduced resistivityNEC CORP·Filed 1992·Granted Sep 7, 1993·117 cites·12 claims
- 0479US6074478AMethod of facet free selective silicon epitaxyNEC CORP·Filed 1998·Granted Jun 13, 2000·38 cites·8 claims
- 0564US5714415AMethod of forming thin semiconductor filmNEC CORP·Filed 1996·Granted Feb 3, 1998·30 cites·8 claims
- 0662US5371039AMethod for fabricating capacitor having polycrystalline silicon filmNEC CORP·Filed 1993·Granted Dec 6, 1994·36 cites·4 claims
- 0737US2003221703A1Method of removing germanium contamination on semiconductor substrateNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 0835US5464795AMethod of forming polycrystalline silicon thin films for semiconductor devicesNEC CORP·Filed 1994·Granted Nov 7, 1995·8 cites·5 claims
- 0927US2001003671A1Method for manufacturing semiconductor device having refractory metal silicide filmFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →