Inventor · disambiguated record
Shiang Yang Ong
Also filed as: ONG SHIANG YANG
22 granted patents·6 pending applications·206 citations·filing 2003–2023
94Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD15CHARTERED SEMICONDUCTOR MFG5HOENTSCHEL JAN4PANDEY SHESH MANI1SASSIAT NICOLAS1
Top patents by PatentIndex Score
28 records- 0196US8936977B2Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsHOENTSCHEL JAN·Filed 2012·Granted Jan 20, 2015·21 cites·14 claims
- 0296US8703578B2Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsHOENTSCHEL JAN·Filed 2012·Granted Apr 22, 2014·22 cites·15 claims
- 0395US8975704B2Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Mar 10, 2015·18 cites·20 claims
- 0495US7109099B2End of range (EOR) secondary defect engineering using substitutional carbon dopingCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Sep 19, 2006·102 cites·20 claims
- 0593US9673084B2Isolation scheme for high voltage deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Jun 6, 2017·13 cites·22 claims
- 0687US8975708B2Semiconductor device with reduced contact resistance and method of manufacturing thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Mar 10, 2015·6 cites·18 claims
- 0785US7727856B2Selective STI stress relaxation through ion implantationCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Jun 1, 2010·10 cites·55 claims
- 0874US10529819B2High voltage Schottky diode and manufacturing method thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jan 7, 2020·2 cites·20 claims
- 0974US10510831B2Low on resistance high voltage metal oxide semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 17, 2019·2 cites·16 claims
- 1074US9831304B1Integrated circuits with deep trench isolations and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 28, 2017·3 cites·18 claims
- 1171US7400018B2End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon dopingCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Jul 15, 2008·3 cites·6 claims
- 1270US8008744B2Selective STI stress relaxation through ion implantationGLOBALFOUNDRIES SG PTE LTD·Filed 2010·Granted Aug 30, 2011·2 cites·20 claims
- 1359US2025142983A1Single-photon avalanche diodes with hybrid trench isolation structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 1457US8999803B2Methods for fabricating integrated circuits with the implantation of fluorineGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Apr 7, 2015·1 cites·9 claims
- 1556US8828834B2Methods of tailoring work function of semiconductor devices with high-k/metal layer gate structures by performing a fluorine implant processPANDEY SHESH MANI·Filed 2012·Granted Sep 9, 2014·1 cites·16 claims
- 1655US2015054072A1Late in-situ doped sige junctions for pmos devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Application pending·0 cites
- 1754US2024243118A1Electrostatic deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 1852US11908930B2Laterally-diffused metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layerGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 1950US12136649B2Deep trench isolation structures with a substrate connectionGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 2050US7767577B2Nested and isolated transistors with reduced impedance differenceCHARTERED SEMICONDUCTOR MFG·Filed 2008·Granted Aug 3, 2010·0 cites·18 claims
- 2149US10504768B1Contact structures to deep trench isolation structures and method of nanufacturing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 2249US8470700B2Semiconductor device with reduced contact resistance and method of manufacturing thereofTOH ENG HUAT·Filed 2010·Granted Jun 25, 2013·0 cites·15 claims
- 2345US8916430B2Methods for fabricating integrated circuits with the implantation of nitrogenGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Dec 23, 2014·0 cites·20 claims
- 2442US2009090975A1Integrated circuit system employing fluorine dopingCHARTERED SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2541US8143651B2Nested and isolated transistors with reduced impedance differenceWIDODO JOHNNY·Filed 2010·Granted Mar 27, 2012·0 cites·19 claims
- 2641US2014264484A1Fluorine-doped channel silicon-germanium layerSASSIAT NICOLAS·Filed 2013·Application pending·0 cites
- 2741US2014103449A1Oxygen free rta on gate first hkmg stacksHOENTSCHEL JAN·Filed 2012·Application pending·0 cites
- 2839US8440530B2Methods of forming highly scaled semiconductor devices using a disposable spacer techniqueHOENTSCHEL JAN·Filed 2011·Granted May 14, 2013·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →