Inventor · disambiguated record
Shing-Chyang Pan
Also filed as: PAN SHING-CHYANG
56 granted patents·9 pending applications·321 citations·filing 2002–2023
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD42TAIWAN SEMICONDUCTOR MFG17KO CHUNG-CHI1LEE BIH-HUEY1LEE HSIEN MING1
Top patents by PatentIndex Score
65 records- 0197US9659811B1Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·19 cites·20 claims
- 0296US9679804B1Multi-patterning to form vias with straight profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·19 cites·20 claims
- 0396US8361900B2Barrier layer for copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·36 cites·23 claims
- 0495US10685873B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 16, 2020·10 cites·20 claims
- 0595US7193327B2Barrier structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 20, 2007·43 cites·17 claims
- 0694US10468297B1Metal-based etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·8 cites·20 claims
- 0793US11515474B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
- 0892US11697588B2Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 0992US10862026B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 8, 2020·2 cites·20 claims
- 1091US11479849B2Physical vapor deposition chamber with target surface morphology monitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 25, 2022·2 cites·20 claims
- 1191US9887072B2Systems and methods for integrated resputtering in a physical vapor deposition chamberTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 6, 2018·4 cites·20 claims
- 1290US11004734B2Metal-based etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·4 cites·20 claims
- 1390US10978301B2Morphology of resist mask prior to etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 13, 2021·6 cites·20 claims
- 1490US7704886B2Multi-step Cu seed layer formation for improving sidewall coverageTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Apr 27, 2010·16 cites·19 claims
- 1589US10535816B2Via structure, MRAM device using the via structure and method for fabricating the MRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·4 cites·20 claims
- 1689US6846756B2Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 25, 2005·39 cites·20 claims
- 1787US11198606B2Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·2 cites·20 claims
- 1885US12151932B2Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 1985US10867839B2Patterning methods for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·3 cites·20 claims
- 2085US9567668B2Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·3 cites·20 claims
- 2183US12486566B2Physical vapor deposition chamber with target surface morphology monitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 2282US11991930B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2382US11651993B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·1 cites·20 claims
- 2482US10727045B2Method for manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 2581US12245529B2Diffusion barrier layer in programmable metallization cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2680US6656832B1Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical propertiesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 2, 2003·30 cites·7 claims
- 2779US12074058B2Patterning methods for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2878US6821905B2Method for avoiding carbon and nitrogen contamination of a dielectric insulating layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 23, 2004·24 cites·25 claims
- 2977US12451393B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 3077US11778931B2Diffusion barrier layer in programmable metallization cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 3177US11049763B2Multi-patterning to form vias with straight profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·1 cites·20 claims
- 3277US10361112B2High aspect ratio gap fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·2 cites·20 claims
- 3377US2023294978A1Structure for microelectromechanical systems (mems) devices to control pressure at high temperatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3475US11814283B2Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 3574US11322396B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 3, 2022·1 cites·20 claims
- 3673US11769693B2Metal-based etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 3773US10515788B2Systems and methods for integrated resputtering in a physical vapor deposition chamberTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 3870US11676852B2Patterning methods for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 3969US8252690B2In situ Cu seed layer formation for improving sidewall coverageSU LI-LIN·Filed 2008·Granted Aug 28, 2012·3 cites·9 claims
- 4069US7805258B2System and method for film stress and curvature gradient mapping for screening problematic wafersTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 28, 2010·3 cites·18 claims
- 4168US11594678B2Diffusion barrier layer in programmable metallization cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 4268US11040870B2Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 4365US9330915B2Surface pre-treatment for hard mask fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 3, 2016·1 cites·18 claims
- 4464US7247252B2Method of avoiding plasma arcing during RIE etchingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 24, 2007·12 cites·18 claims
- 4563US10811263B2Method for forming semiconductor device structure with etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·0 cites·20 claims
- 4663US2020357634A1Method for Manufacturing a Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 4761US7030023B2Method for simultaneous degas and baking in copper damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 18, 2006·7 cites·20 claims
- 4860US7253501B2High performance metallization cap layerTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 7, 2007·9 cites·13 claims
- 4957US10510585B2Multi-patterning to form vias with straight profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 5056US10522360B2Method for forming semiconductor device structure with etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·0 cites·20 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →