Inventor · disambiguated record
Shadi Sabri
Also filed as: SABRI SHADI · SABRI SHADI S
6 granted patents·4 pending applications·1 citations·filing 2019–2024
67Inventor score
Top patents by PatentIndex Score
10 records- 0177US12159909B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2023·Granted Dec 3, 2024·0 cites·18 claims
- 0269US10847647B2Power semiconductor devices having top-side metallization structures that include buried grain stop layersCREE INC·Filed 2019·Granted Nov 24, 2020·1 cites·28 claims
- 0367US11869948B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2021·Granted Jan 9, 2024·0 cites·31 claims
- 0461US12446300B2Semiconductor devices having on-chip gate resistorsWOLFSPEED INC·Filed 2022·Granted Oct 14, 2025·0 cites·19 claims
- 0555US2025343091A1Integration of Liner in Passivation StackWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 0654US2025113531A1Power silicon carbide based semiconductor devices with selective jfet implants that are self-aligned with the well regions and methods of making such devicesWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 0750US11222955B2Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devicesWOLFSPEED INC·Filed 2020·Granted Jan 11, 2022·0 cites·20 claims
- 0850US2024234370A1Semiconductor device and related fabrication methodWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 0946US2023124215A1Multiple silicide process for separately forming n-type and p-type ohmic contacts and related devicesWOLFSPEED INC·Filed 2021·Application pending·0 cites
- 1045US10998418B2Power semiconductor devices having reflowed inter-metal dielectric layersCREE INC·Filed 2019·Granted May 4, 2021·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →