Inventor · disambiguated record
Shuichi Samata
Also filed as: SAMATA SHUICHI
32 granted patents·5 pending applications·1,319 citations·filing 1984–2022
98Inventor score
Top patents by PatentIndex Score
37 records- 0198US5246500AVapor phase epitaxial growth apparatusTOSHIBA KK·Filed 1992·Granted Sep 21, 1993·604 cites·5 claims
- 0288US5502331ASemiconductor substrate containing bulk micro-defectTOSHIBA KK·Filed 1995·Granted Mar 26, 1996·99 cites·1 claims
- 0386US5738942ASemiconductor silicon wafer and process for producing itTOSHIBA KK·Filed 1995·Granted Apr 14, 1998·73 cites·8 claims
- 0484US5534294AProcess for producing Semiconductor silicon waferTOSHIBA KK·Filed 1994·Granted Jul 9, 1996·79 cites·4 claims
- 0582US6865513B2Method for predicting life of rotary machine and determining repair timing of rotary machineTOSHIBA KK·Filed 2002·Granted Mar 8, 2005·18 cites·18 claims
- 0678US6909993B2Method for diagnosing failure of a manufacturing apparatus and a failure diagnosis systemTOSHIBA KK·Filed 2002·Granted Jun 21, 2005·20 cites·17 claims
- 0778US6885972B2Method for predicting life span of rotary machine used in manufacturing apparatus and life predicting systemTOSHIBA KK·Filed 2002·Granted Apr 26, 2005·21 cites·8 claims
- 0875US11047800B2Method of evaluating carbon concentration of silicon sample, method of evaluating silicon wafer manufacturing process, method of manufacturing silicon wafer, method of manufacturing silicon single crystal ingot, silicon single crystal ingot and silicon waferSUMCO CORP·Filed 2017·Granted Jun 29, 2021·3 cites·13 claims
- 0975US6937963B2Method for avoiding irregular shutoff of production equipment and system for avoiding irregular shutoffTOSHIBA KK·Filed 2002·Granted Aug 30, 2005·18 cites·20 claims
- 1075US6766275B2Method for diagnosing life of manufacturing equipment using rotary machineTOSHIBA KK·Filed 2002·Granted Jul 20, 2004·17 cites·23 claims
- 1175US5124276AFilling contact hole with selectively deposited EPI and poly siliconTOSHIBA KK·Filed 1991·Granted Jun 23, 1992·44 cites·9 claims
- 1272US6944572B2Apparatus for predicting life of rotary machine and equipment using the sameTOSHIBA KK·Filed 2004·Granted Sep 13, 2005·15 cites·22 claims
- 1372US5356830ASemiconductor device and its manufacturing methodTOBSHIBA KK·Filed 1990·Granted Oct 18, 1994·54 cites·14 claims
- 1471US7844433B2System, method and program for designing a utility facility and method for manufacturing a product by the utility facilityTOSHIBA KK·Filed 2006·Granted Nov 30, 2010·8 cites·20 claims
- 1567US8173523B2Method of removing heavy metal in semiconductor substrateMITSUGI NORITOMO·Filed 2010·Granted May 8, 2012·3 cites·7 claims
- 1666US5378652AMethod of making a through hole in multi-layer insulating filmsTOSHIBA KK·Filed 1991·Granted Jan 3, 1995·37 cites·6 claims
- 1765US5951755AManufacturing method of semiconductor substrate and inspection method thereforTOSHIBA KK·Filed 1997·Granted Sep 14, 1999·33 cites·20 claims
- 1862US7065469B2Manufacturing apparatus and method for predicting life of a manufacturing apparatus which uses a rotary machineTOSHIBA KK·Filed 2003·Granted Jun 20, 2006·9 cites·16 claims
- 1961US6008110ASemiconductor substrate and method of manufacturing sameTOSHIBA KK·Filed 1997·Granted Dec 28, 1999·27 cites·17 claims
- 2058US5291058ASemiconductor device silicon via fill formed in multiple dielectric layersTOSHIBA KK·Filed 1992·Granted Mar 1, 1994·26 cites·4 claims
- 2157US6898551B2System for predicting life of a rotary machine, method for predicting life of a manufacturing apparatus which uses a rotary machine and a manufacturing apparatusTOSHIBA KK·Filed 2003·Granted May 24, 2005·6 cites·12 claims
- 2257US5057899ASemiconductor device with improved wiring contact portionTOSHIBA KK·Filed 1990·Granted Oct 15, 1991·21 cites·6 claims
- 2352US5004702APreparation method of selective growth silicon layer doped with impuritiesTOSHIBA KK·Filed 1989·Granted Apr 2, 1991·19 cites·7 claims
- 2452US4966866AMethod for manufacturing semiconductor device having gate electrodes of different conductivity typesTOSHIBA KK·Filed 1989·Granted Oct 30, 1990·13 cites·11 claims
- 2552US2025327760A1Method of evaluating semiconductor sample, evaluation device of semiconductor sample and method of manufacturing semiconductor waferSUMCO CORP·Filed 2022·Application pending·0 cites
- 2649US5116780AMethod of manufacturing a semiconductor device having improved contact resistance characteristicsTOSHIBA KK·Filed 1990·Granted May 26, 1992·13 cites·8 claims
- 2748US10935510B2Method of measuring carbon concentration of silicon sample, method of manufacturing silicon single crystal ingot, silicon single crystal ingot and silicon waferSUMCO CORP·Filed 2017·Granted Mar 2, 2021·0 cites·15 claims
- 2847US11183433B2Method of evaluating silicon layer and a method of manufacturing silicon epitaxial waferSUMCO CORP·Filed 2019·Granted Nov 23, 2021·0 cites·8 claims
- 2947US5148457ASystem for analyzing metal impurity on the surface of a single crystal semiconductor by using total reflection of x-rays fluorescenceTOSHIBA KK·Filed 1991·Granted Sep 15, 1992·14 cites·6 claims
- 3046US2024344951A1Method of measuring contact angle of silicon wafer and method of evaluating surface condition of silicon waferSUMCO CORP·Filed 2022·Application pending·0 cites
- 3145US4579601AMethod of growing a resistive epitaxial layer on a short lifetime epi-layerTOSHIBA KK·Filed 1984·Granted Apr 1, 1986·12 cites·11 claims
- 3243US10676840B2Method of evaluating manufacturing process of silicon material and manufacturing method of silicon materialSUMCO CORP·Filed 2017·Granted Jun 9, 2020·0 cites·9 claims
- 3342US2005107984A1Manufacturing apparatus and method for predicting life of rotary machine used in the sameTOSHIBA KK·Filed 2004·Application pending·0 cites
- 3439US5508800ASemiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrateTOSHIBA KK·Filed 1993·Granted Apr 16, 1996·11 cites·13 claims
- 3538US2004064212A1Manufacturing apparatus and method for predicting life of rotary machine used in the sameFiled 2003·Application pending·0 cites
- 3637US2002141477A1Thin film thickness monitoring method and substrate temperature measuring methodTOSHIBA KK·Filed 2002·Application pending·0 cites
- 3730US5731247AMethod for manufacturing a semiconductor device including pre-oxidation processTOSHIBA KK·Filed 1995·Granted Mar 24, 1998·2 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →