Inventor · disambiguated record
Shinichi Satoh
Also filed as: SATOH SHINICHI
79 granted patents·2 pending applications·1,515 citations·filing 1982–2017
99Inventor score
Files withMITSUBISHI ELECTRIC CORP32FUJITSU LTD14SHINETSU CHEMICAL CO11HITACHI CONSTRUCTION MACHINERY4OKI SEMICONDUCTOR CO LTD4
Top patents by PatentIndex Score
81 records- 0197US5250121AInk-jet textile printing ink and ink-jet textile printing processCANON KK·Filed 1992·Granted Oct 5, 1993·131 cites·41 claims
- 0296US5358558AInk-jet textile printing ink and ink-jet textile printing processCANON KK·Filed 1993·Granted Oct 25, 1994·79 cites·26 claims
- 0393US5051948AContent addressable memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 24, 1991·81 cites·21 claims
- 0493US5014110AWiring structures for semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 7, 1991·81 cites·19 claims
- 0592US4875337AConstruction machine dual-dump hydraulic circuit with piloted arm-boom cylinder supply priority switching valvesHITACHI CONSTRUCTION MACHINERY·Filed 1987·Granted Oct 24, 1989·46 cites·7 claims
- 0691US4994893AField effect transistor substantially coplanar surface structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 19, 1991·62 cites·12 claims
- 0786US5047817AStacked capacitor for semiconductor memory deviceMITSUBISHI DENKI KABUSHIKI KAS·Filed 1989·Granted Sep 10, 1991·42 cites·14 claims
- 0884US5272100AField effect transistor with T-shaped gate electrode and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 21, 1993·61 cites·3 claims
- 0982US5834817AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 10, 1998·42 cites·5 claims
- 1081US5089863AField effect transistor with T-shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 18, 1992·33 cites·6 claims
- 1181US5084752ASemiconductor device having bonding pad comprising buffer layerMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 28, 1992·59 cites·19 claims
- 1280US5177571ALdd mosfet with particularly shaped gate electrode immune to hot electron effectMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 5, 1993·37 cites·4 claims
- 1379US5801288ADiphenyl sulfone derivative and recording material prepared therefromNIPPON SODA CO·Filed 1995·Granted Sep 1, 1998·17 cites·2 claims
- 1477US10467974B2Display driver and method for evaluating display deviceLAPIS SEMICONDUCTOR CO LTD·Filed 2016·Granted Nov 5, 2019·2 cites·15 claims
- 1577US4753158APilot hydraulic system for operating directional control valveHITACHI CONSTRUCTION MACHINERY·Filed 1986·Granted Jun 28, 1988·22 cites·9 claims
- 1676US7305852B2Method for manufacturing quartz glass ingotTOSOH QUARTZ CORP·Filed 2001·Granted Dec 11, 2007·10 cites·5 claims
- 1776US5225704AField shield isolation structure for semiconductor memory device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 6, 1993·37 cites·19 claims
- 1875US4478376AMethod of winding magnetic recording tapeFUJI PHOTO FILM CO LTD·Filed 1982·Granted Oct 23, 1984·18 cites·3 claims
- 1974US5164803ACmos semiconductor device with an element isolating field shieldMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·36 cites·4 claims
- 2073US7696962B2Color balancing circuit for a display panelOKI SEMICONDUCTOR CO LTD·Filed 2005·Granted Apr 13, 2010·3 cites·20 claims
- 2171US7106283B2Efficiently testable display driving circuitOKI ELECTRIC IND CO LTD·Filed 2003·Granted Sep 12, 2006·11 cites·15 claims
- 2270US7498867B2Current drive circuitOKI SEMICONDUCTOR CO LTD·Filed 2007·Granted Mar 3, 2009·3 cites·8 claims
- 2370US6619548B1System and method of reading bar code with two scanning beamsFUJITSU LTD·Filed 2000·Granted Sep 16, 2003·9 cites·29 claims
- 2469US7586471B2Drive circuit and drive method for panel display deviceOKI SEMICONDUCTOR CO LTD·Filed 2005·Granted Sep 8, 2009·2 cites·14 claims
- 2568US6189796B1System and method of reading bar code with two scanning beamsFUJITSU LTD·Filed 1999·Granted Feb 20, 2001·23 cites·28 claims
- 2668US4861908AOrganosilicon compoundSHINETSU CHEMICAL CO·Filed 1988·Granted Aug 29, 1989·15 cites·8 claims
- 2766US5942740AMethod and apparatus for reading bar codesFUJITSU LTD·Filed 1997·Granted Aug 24, 1999·32 cites·32 claims
- 2866US5521419ASemiconductor device having field shield element isolating structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 28, 1996·36 cites·10 claims
- 2965US5094965AField effect transistor having substantially coplanar surface structure and a manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 10, 1992·21 cites·8 claims
- 3065US4960847ARoom temperature vulcanizable organopolysiloxane compositionSHINETSU CHEMICAL CO·Filed 1988·Granted Oct 2, 1990·17 cites·13 claims
- 3164US5194648AFluorinated carboxylic acid derivatives and methods for makingSHINETSU CHEMICAL CO·Filed 1990·Granted Mar 16, 1993·7 cites·7 claims
- 3263US7012587B2Matrix display device, matrix display driving method, and matrix display driver circuitOKI ELECTRIC IND CO LTD·Filed 2002·Granted Mar 14, 2006·9 cites·33 claims
- 3363US5650342AMethod of making a field effect transistor with a T shaped polysilicon gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 22, 1997·18 cites·3 claims
- 3463US5471080AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 28, 1995·19 cites·2 claims
- 3563US5288661ASemiconductor device having bonding pad comprising buffer layerMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 22, 1994·28 cites·4 claims
- 3663US5049959ASemiconductor integrated circuit deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 17, 1991·22 cites·7 claims
- 3761US4680598AChromogenic materials employing fluoran compoundsSHIN NISSO KAKO CO LTD·Filed 1986·Granted Jul 14, 1987·16 cites·58 claims
- 3859US6334572B1Bar-code readerFUJITSU LTD·Filed 2000·Granted Jan 1, 2002·5 cites·3 claims
- 3959US4687862AFluoran compoundsSHIN NISSO KAKO CO LTD·Filed 1986·Granted Aug 18, 1987·15 cites·6 claims
- 4057US5930614AMethod for forming MOS device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 27, 1999·22 cites·4 claims
- 4156US6189794B1Bar code reader determining unit for determining the true changing point and correcting unit for correcting the false changing point to correct changing pointFUJITSU LTD·Filed 1998·Granted Feb 20, 2001·17 cites·11 claims
- 4255US5101057AFluorinated carboxylic acid derivatives and methods for makingSHINETSU CHEMICAL CO·Filed 1990·Granted Mar 31, 1992·6 cites·6 claims
- 4355US5067000ASemiconductor device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 19, 1991·17 cites·13 claims
- 4453US5543646AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 6, 1996·11 cites·2 claims
- 4553US5459344AStacked capacitor type semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 17, 1995·12 cites·5 claims
- 4653US5064898ARoom temperature-curable organopolysiloxane composition and method for the preparation thereofSHINETSU CHEMICAL CO·Filed 1990·Granted Nov 12, 1991·10 cites·11 claims
- 4752US5183774AMethod of making a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 2, 1993·14 cites·13 claims
- 4851US5027173ASemiconductor memory device with two separate gates per blockMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jun 25, 1991·12 cites·13 claims
- 4949US6032865AMethod of reading bar codeFUJITSU LTD·Filed 1999·Granted Mar 7, 2000·9 cites·3 claims
- 5049US5126420ARtv organopolysiloxane compositionsSHINETSU CHEMICAL CO·Filed 1990·Granted Jun 30, 1992·7 cites·2 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →