Inventor · disambiguated record

Shu-Hui Su

Also filed as: SU SHU-HUI

13 granted patents·14 pending applications·240 citations·filing 2010–2025

90Inventor score

Technology areasH10W H10P H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD22 TAIWAN SEMICONDUCTOR MFG2 LIU NAI-WEI1 SU SHU-HUI1 TSENG UWAY1

Top patents by PatentIndex Score

27 records

0197US8999839B2Semiconductor structure having an air-gap region and a method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·187 cites·20 claims
0294US10361152B2Semiconductor structure having an air-gap region and a method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 23, 2019·11 cites·20 claims
0393US11063157B1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·6 cites·20 claims
0491US8456009B2Semiconductor structure having an air-gap region and a method of manufacturing the sameSU SHU-HUI·Filed 2010·Granted Jun 4, 2013·19 cites·20 claims
0588US11769792B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
0684US2025063744A1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0783US12176387B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
0883US8975749B2Method of making a semiconductor device including barrier layers for copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 10, 2015·5 cites·20 claims
0979US8653664B2Barrier layers for copper interconnectLIU NAI-WEI·Filed 2010·Granted Feb 18, 2014·6 cites·20 claims
1079US2025366218A1Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1176US8716871B2Big via structureTSENG UWAY·Filed 2012·Granted May 6, 2014·5 cites·20 claims
1276US2025316579A1Etch stop structure for ic to increase stability and enduranceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1376US2025351385A1Deep trench capacitor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1474US2025113496A1Trench capacitor film scheme to reduce substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1572US2024178211A1Semiconductor device with capacitor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1670US2025254894A1Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1769US12317517B2Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
1869US12230542B2Method for dicing a semiconductor wafer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
1969US11923352B2Semiconductor device with capacitor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
2068US12199139B2Trench capacitor film scheme to reduce substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
2168US2024021513A1Etch stop structure for ic to increase stability and enduranceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2267US2024258302A1Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2363US2025149384A1Method for dicing a semiconductor wafer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2459US2025246536A1Trench capacitor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2556US2025063743A1In-trench capacitor merged structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2655US2024321723A1Structure to mitigate vertical interconnect access induced metal corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2751US2024030359A1Semiconductor device with capacitor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →