Inventor · disambiguated record
Shih-Tzung Su
Also filed as: SU SHIH TZUNG
13 granted patents·3 pending applications·114 citations·filing 2007–2024
90Inventor score
Files withMAXPOWER SEMICONDUCTOR INC11INPOWER SEMICONDUCTOR CO LTD2DARWISH MOHAMED N1SU SHIH TZUNG1ZENG JUN1
Top patents by PatentIndex Score
16 records- 0197US9093522B1Vertical power MOSFET with planar channel and vertical field plateMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jul 28, 2015·60 cites·24 claims
- 0289US9761702B2Power MOSFET having planar channel, vertical current path, and top drain electrodeMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Sep 12, 2017·6 cites·20 claims
- 0389US9461127B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Oct 4, 2016·6 cites·32 claims
- 0489US8581341B2Power MOSFET with embedded recessed field plate and methods of fabricationDARWISH MOHAMED N·Filed 2011·Granted Nov 12, 2013·10 cites·18 claims
- 0588US9184248B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Nov 10, 2015·6 cites·21 claims
- 0688US7923804B2Edge termination with improved breakdown voltageMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Apr 12, 2011·13 cites·20 claims
- 0782US10157983B2Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islandsMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Dec 18, 2018·4 cites·20 claims
- 0878US9947779B2Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltageMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Apr 17, 2018·2 cites·16 claims
- 0978US8294235B2Edge termination with improved breakdown voltageZENG JUN·Filed 2011·Granted Oct 23, 2012·4 cites·19 claims
- 1064US2025241037A1Self-aligned source contact for sic switch utilizing oxidation rate difference between poly-si and sicMAXPOWER SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 1161US2024347585A1Mosfet with distributed doped p-shield zones under trenches having different depthsMAXPOWER SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 1257US7687352B2Trench MOSFET and method of manufacture utilizing four masksINPOWER SEMICONDUCTOR CO LTD·Filed 2007·Granted Mar 30, 2010·3 cites·20 claims
- 1353US12057482B2MOSFET with distributed doped P-shield zones under trenchesMAXPOWER SEMICONDUCTOR INC·Filed 2021·Granted Aug 6, 2024·0 cites·27 claims
- 1447US11289596B2Split gate power device and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2020·Granted Mar 29, 2022·0 cites·19 claims
- 1534US7799642B2Trench MOSFET and method of manufacture utilizing two masksINPOWER SEMICONDUCTOR CO LTD·Filed 2007·Granted Sep 21, 2010·0 cites·9 claims
- 1634US2009085099A1Trench mosfet and method of manufacture utilizing three masksSU SHIH TZUNG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →