Inventor · disambiguated record
Shimpei Takagi
Also filed as: TAKAGI SHIMPEI
24 granted patents·8 pending applications·175 citations·filing 2010–2024
95Inventor score
Files withTAKAGI SHIMPEI11SUMITOMO ELECTRIC INDUSTRIES6FUJIFILM BUSINESS INNOVATION CORP5YOSHIZUMI YUSUKE5FUJI XEROX CO LTD2
Top patents by PatentIndex Score
32 records- 0196US8076167B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Dec 13, 2011·22 cites·7 claims
- 0295US8105857B2Method of fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Jan 31, 2012·25 cites·19 claims
- 0395US8071405B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Dec 6, 2011·20 cites·2 claims
- 0493US8389312B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Granted Mar 5, 2013·13 cites·8 claims
- 0593US8265113B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Sep 11, 2012·14 cites·18 claims
- 0693US8175129B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe grooveYOSHIZUMI YUSUKE·Filed 2010·Granted May 8, 2012·14 cites·23 claims
- 0793US8139619B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2011·Granted Mar 20, 2012·13 cites·11 claims
- 0892US8401048B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Mar 19, 2013·12 cites·19 claims
- 0992US8213475B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2011·Granted Jul 3, 2012·12 cites·15 claims
- 1090US8361885B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe grooveSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 29, 2013·9 cites·13 claims
- 1186US8741674B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jun 3, 2014·6 cites·10 claims
- 1285US8420419B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2012·Granted Apr 16, 2013·5 cites·11 claims
- 1380US8507305B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2012·Granted Aug 13, 2013·4 cites·16 claims
- 1475US9379521B2Group III nitride semiconductor laser device, method for producing group III nitride semiconductor laser device, method for evaluating end facet for optical cavity of group III nitride semiconductor laser device, and method for evaluating scribe grooveSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Jun 28, 2016·3 cites·24 claims
- 1569US2024425675A1Porous cellulose structure and resin compositionFUJIFILM BUSINESS INNOVATION CORP·Filed 2024·Application pending·0 cites
- 1669US2024417548A1Resin compositionFUJIFILM BUSINESS INNOVATION CORP·Filed 2024·Application pending·0 cites
- 1767US12287607B2Electrostatic charge image developing toner, electrostatic charge image developer, toner cartridge, process cartridge, image forming apparatus, and image forming methodFUJIFILM BUSINESS INNOVATION CORP·Filed 2022·Granted Apr 29, 2025·0 cites·17 claims
- 1865US8953656B2III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser deviceKYONO TAKASHI·Filed 2012·Granted Feb 10, 2015·1 cites·15 claims
- 1965US8772064B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2011·Granted Jul 8, 2014·1 cites·12 claims
- 2058US9231370B2Group III nitride semiconductor light emitting deviceSUMITOMO TAKAMICHI·Filed 2012·Granted Jan 5, 2016·1 cites·20 claims
- 2156US8929416B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Jan 6, 2015·0 cites·10 claims
- 2253US12455515B2Electrostatic charge image developing toner, electrostatic charge image developer, toner cartridge, process cartridge, image forming apparatus, and image forming methodFUJIFILM BUSINESS INNOVATION CORP·Filed 2022·Granted Oct 28, 2025·0 cites·15 claims
- 2352US2020032101A1Aqueous emulsion, aqueous coating composition, and surface protective resin memberFUJI XEROX CO LTD·Filed 2019·Application pending·0 cites
- 2450US8594145B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Nov 26, 2013·0 cites·10 claims
- 2548US2011228804A1Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 2647US2011158277A1Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 2746US2023107000A1Electrostatic charge image developing toner, electrostatic charge image developer, toner cartridge, process cartridge, image forming apparatus, and image forming methodFUJIFILM BUSINESS INNOVATION CORP·Filed 2022·Application pending·0 cites
- 2843US10407585B2Aqueous ink for ink jet recording, aqueous ink set for ink jet recording, and ink jet recording methodFUJI XEROX CO LTD·Filed 2017·Granted Sep 10, 2019·0 cites·16 claims
- 2940US9036671B2Method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2012·Granted May 19, 2015·0 cites·19 claims
- 3040US8642366B2Method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2012·Granted Feb 4, 2014·0 cites·19 claims
- 3140US2013182734A1Laser diode and method of manufacturing laser diodeSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 3240US2013148681A1Method of manufacturing semiconductor laser device and semiconductor laser deviceSONY CORP·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →