Inventor · disambiguated record
Shinya Takashima
Also filed as: TAKASHIMA SHINYA
24 granted patents·11 pending applications·31 citations·filing 2004–2025
92Inventor score
Top patents by PatentIndex Score
35 records- 0186US10903352B2Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jan 26, 2021·4 cites·5 claims
- 0284US9754783B2Method for producing a semiconductor device, and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Sep 5, 2017·4 cites·22 claims
- 0382US11862687B2Nitride semiconductor device and method for fabricating nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Jan 2, 2024·1 cites·21 claims
- 0476US10181514B2Vertical semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2017·Granted Jan 15, 2019·2 cites·6 claims
- 0576US10121876B2Method for high temperature annealing of a nitride semiconductor layerFUJI ELECTRIC CO LTD·Filed 2017·Granted Nov 6, 2018·2 cites·13 claims
- 0675US10256292B2Vertical MOSFETFUJI ELECTRIC CO LTD·Filed 2016·Granted Apr 9, 2019·2 cites·3 claims
- 0773US10749003B2Manufacturing method of semiconductor device and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Aug 18, 2020·1 cites·4 claims
- 0871US10170564B2Manufacturing method of semiconductor device and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·10 claims
- 0970US10141192B2Manufacturing method of semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Nov 27, 2018·1 cites·11 claims
- 1066US11257676B2Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Feb 22, 2022·1 cites·19 claims
- 1163US7401994B2Securing clipPIOLAX INC·Filed 2004·Granted Jul 22, 2008·12 cites·9 claims
- 1260US2024313089A1Nitride semiconductor device and fabrication method thereofFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1359US11232180B2Face authentication system, face authentication method, biometrics authentication system, biometrics authentication method, and storage mediumNEC CORP·Filed 2019·Granted Jan 25, 2022·0 cites·17 claims
- 1459US11232181B2Face authentication system, face authentication method, biometrics authentication system, biometrics authentication method, and storage mediumNEC CORP·Filed 2019·Granted Jan 25, 2022·0 cites·17 claims
- 1559US2025126863A1Semiconductor device and method for manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1659US2025351498A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 1759US2025212473A1Nitride semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1857US10719595B2Face authentication system, face authentication method, biometrics authentication system, biometrics authentication method, and storage mediumNEC CORP·Filed 2019·Granted Jul 21, 2020·0 cites·16 claims
- 1957US2024030322A1Semiconductor apparatus, and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 2057US2024387641A1Nitride semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 2153US12237379B2Method for manufacturing nitride semiconductor device and nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·25 claims
- 2251US12294019B2Method for manufacturing nitride semiconductor device and nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted May 6, 2025·0 cites·13 claims
- 2351US10615293B2Diode and method of manufacturing diodeFUJI ELECTRIC CO LTD·Filed 2018·Granted Apr 7, 2020·0 cites·11 claims
- 2450US11862686B2Nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Jan 2, 2024·0 cites·13 claims
- 2550US11062907B2Nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·12 claims
- 2649US10128106B2Semiconductor device and manufacturing method of the semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Nov 13, 2018·0 cites·16 claims
- 2745US10366891B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jul 30, 2019·0 cites·14 claims
- 2845US9905433B2Manufacturing method of semiconductor device including a nitride semiconductor layerFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 27, 2018·0 cites·14 claims
- 2945US9805930B2Method of manufacturing nitride semiconductor device using laminated cap layersFUJI ELECTRIC CO LTD·Filed 2016·Granted Oct 31, 2017·0 cites·12 claims
- 3044US2020411647A1Nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Application pending·0 cites
- 3143US10374031B2Semiconductor device and manufacturing method of semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Aug 6, 2019·0 cites·13 claims
- 3241US2022139402A1Voice authentication apparatus, voice authentication method, and a recording mediumNEC CORP·Filed 2020·Application pending·0 cites
- 3340US2010314247A1Filtered cathodic arc device and carbon protective film deposited using the deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2010·Application pending·0 cites
- 3435US2016365438A1Method of manufacturing nitride semiconductor device and nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Application pending·0 cites
- 3534US2015380498A1Method for producing a semiconductor device, and semiconductor device produced therebyFUJI ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →