Inventor · disambiguated record
Shuichi Tamamushi
Also filed as: TAMAMUSHI SHUICHI
31 granted patents·4 pending applications·606 citations·filing 1990–2022
97Inventor score
Files withNUFLARE TECHNOLOGY INC13TOSHIBA KK10SAMSUNG ELECTRONICS CO LTD4TAMAMUSHI SHUICHI4ALITECS CORP1
Top patents by PatentIndex Score
35 records- 0197US10012900B2Method of correcting mask pattern and method of manufacturing reticleSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 3, 2018·12 cites·15 claims
- 0294US5627626AProjectin exposure apparatusTOSHIBA KK·Filed 1995·Granted May 6, 1997·102 cites·12 claims
- 0394US5621498AProjection exposure apparatusTOSHIBA KK·Filed 1995·Granted Apr 15, 1997·101 cites·5 claims
- 0493US5707501AFilter manufacturing apparatusTOSHIBA KK·Filed 1995·Granted Jan 13, 1998·81 cites·5 claims
- 0591US7643130B2Position measuring apparatus and positional deviation measuring methodNUFLARE TECHNOLOGY INC·Filed 2006·Granted Jan 5, 2010·19 cites·20 claims
- 0690US7834333B2Charged particle beam lithography system and method for evaluating the sameNUFLARE TECHNOLOGY INC·Filed 2007·Granted Nov 16, 2010·13 cites·14 claims
- 0789US9036896B2Inspection system and method for inspecting line width and/or positional errors of a patternTOUYA TAKANAO·Filed 2011·Granted May 19, 2015·11 cites·10 claims
- 0888US8207514B2Charged particle beam drawing apparatus and proximity effect correction method thereofHARA SHIGEHIRO·Filed 2010·Granted Jun 26, 2012·15 cites·10 claims
- 0985US8277603B2Move mechanism for moving target object and charged particle beam writing apparatusTAMAMUSHI SHUICHI·Filed 2007·Granted Oct 2, 2012·11 cites·11 claims
- 1084US8927941B2Multi charged particle beam writing apparatus and multi charged particle beam writing method with fixed voltage ratio einzel lensNUFLARE TECHNOLOGY INC·Filed 2013·Granted Jan 6, 2015·6 cites·8 claims
- 1184US7679068B2Method of calculating deflection aberration correcting voltage and charged particle beam writing methodNUFLARE TECHNOLOGY INC·Filed 2006·Granted Mar 16, 2010·8 cites·14 claims
- 1283US7554107B2Writing method and writing apparatus of charged particle beam, positional deviation measuring method, and position measuring apparatusNUFLARE TECHNOLOGY INC·Filed 2006·Granted Jun 30, 2009·10 cites·17 claims
- 1382US8306310B2Apparatus and method for pattern inspectionTAMAMUSHI SHUICHI·Filed 2009·Granted Nov 6, 2012·5 cites·10 claims
- 1482US7485879B2Electron beam writing apparatus and writing methodNUFLARE TECHNOLOGY INC·Filed 2006·Granted Feb 3, 2009·9 cites·26 claims
- 1581US9406117B2Inspection system and method for inspecting line width and/or positional errors of a patternNUFLARE TECHNOLOGY INC·Filed 2015·Granted Aug 2, 2016·3 cites·6 claims
- 1681US8183544B2Correcting substrate for charged particle beam lithography apparatusTSURUTA KAORU·Filed 2009·Granted May 22, 2012·10 cites·8 claims
- 1779US5885747ACharged beam lithography methodTOSHIBA KK·Filed 1996·Granted Mar 23, 1999·63 cites·6 claims
- 1879US5047646AMethod of correcting astigmatism of variable shaped beamTOSHIBA KK·Filed 1990·Granted Sep 10, 1991·35 cites·19 claims
- 1978US8452074B2Apparatus and method for pattern inspectionTAMAMUSHI SHUICHI·Filed 2012·Granted May 28, 2013·4 cites·10 claims
- 2078US7800084B2System and method for charged-particle beam lithographyNUFLARE TECHNOLOGY INC·Filed 2007·Granted Sep 21, 2010·6 cites·11 claims
- 2177US9343266B2Charged particle beam pattern writing method and charged particle beam writing apparatus that corrects beam rotation utilizing a correlation tableNUFLARE TECHNOLOGY INC·Filed 2013·Granted May 17, 2016·3 cites·14 claims
- 2270US5760410AElectron beam lithography apparatus and methodTOSHIBA KK·Filed 1997·Granted Jun 2, 1998·22 cites·38 claims
- 2368US8229207B2Mask inspection apparatus and mask inspection methodTAMAMUSHI SHUICHI·Filed 2009·Granted Jul 24, 2012·7 cites·9 claims
- 2464US5894057ACharged beam drawing methodTOSHIBA KK·Filed 1997·Granted Apr 13, 1999·17 cites·9 claims
- 2559US12148140B2Process condition estimating apparatus, method, and programALITECS CORP·Filed 2022·Granted Nov 19, 2024·0 cites·15 claims
- 2656US5850083ACharged particle beam lithograph apparatusTOSHIBA KK·Filed 1997·Granted Dec 15, 1998·12 cites·24 claims
- 2753US2010074511A1Mask inspection apparatus, and exposure method and mask inspection method using the sameNUFLARE TECHNOLOGY INC·Filed 2009·Application pending·0 cites
- 2851US6319642B1Electron beam exposure apparatusTOSHIBA KK·Filed 1999·Granted Nov 20, 2001·13 cites·6 claims
- 2950US2008265174A1Charged particle beam writing apparatus and methodNUFLARE TECHNOLOGY INC·Filed 2008·Application pending·0 cites
- 3049US10497534B2Aperture system of electron beam apparatus, electron beam exposure apparatus, and electron beam exposure apparatus systemSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 3, 2019·0 cites·20 claims
- 3145US5793041AMethod for correcting astigmatism and focusing in charged particle optical lens-barrelTOSHIBA KK·Filed 1996·Granted Aug 11, 1998·8 cites·11 claims
- 3242US2007243487A1Forming method of resist pattern and writing method of charged particle beamNUFLARE TECHNOLOGY INC·Filed 2007·Application pending·0 cites
- 3336US9583305B2Exposure method using control of settling times and methods of manufacturing integrated circuit devices by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 28, 2017·0 cites·20 claims
- 3436US2010178611A1Lithography method of electron beamNUFLARE TECHNOLOGY INC·Filed 2010·Application pending·0 cites
- 3533US9709893B2Exposure method using electron beam and substrate manufacturing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →