Inventor · disambiguated record
Shyue Seng Tan
Also filed as: TAN SHYUE SENG · TAN SHYUE SENG JASON
199 granted patents·40 pending applications·369 citations·filing 2004–2024
99Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD184TAN SHYUE SENG18TOH ENG HUAT12CHARTERED SEMICONDUCTOR MFG9TAN SHYUE SENG JASON4
Top patents by PatentIndex Score
239 records- 0197US11793004B2Resistive random access memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Oct 17, 2023·3 cites·15 claims
- 0293US9646963B1Integrated circuits with capacitors and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 9, 2017·10 cites·14 claims
- 0393US9431497B2Transistor devices having an anti-fuse configuration and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Aug 30, 2016·15 cites·20 claims
- 0493US8368127B2Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive currentGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Feb 5, 2013·23 cites·16 claims
- 0592US10847720B1Non-volatile memory elements with filament confinementGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Nov 24, 2020·7 cites·19 claims
- 0691US8647937B2Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levelsTOH ENG HUAT·Filed 2012·Granted Feb 11, 2014·10 cites·12 claims
- 0790US11404549B2Split gate flash memory cells with a trench-formed select gateGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Aug 2, 2022·2 cites·19 claims
- 0890US11335852B2Resistive random access memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted May 17, 2022·2 cites·20 claims
- 0990US10468427B2Poly-insulator-poly (PIP) capacitorGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 5, 2019·7 cites·12 claims
- 1090US9620642B2FinFET with isolationGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Apr 11, 2017·11 cites·19 claims
- 1189US11217747B2Memory devices and methods of forming memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jan 4, 2022·2 cites·17 claims
- 1289US8946806B2Memory cell with decoupled channelsTAN SHYUE SENG·Filed 2011·Granted Feb 3, 2015·12 cites·21 claims
- 1389US8698118B2Compact RRAM device and methods of making sameTOH ENG HUAT·Filed 2012·Granted Apr 15, 2014·9 cites·23 claims
- 1489US8324031B2Diffusion barrier and method of formation thereofTAN SHYUE SENG·Filed 2008·Granted Dec 4, 2012·10 cites·7 claims
- 1589US8211761B2Semiconductor system using germanium condensationTAN SHYUE SENG·Filed 2006·Granted Jul 3, 2012·17 cites·13 claims
- 1688US10217828B1Transistors with field plates on fully depleted silicon-on-insulator platform and method of making the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Feb 26, 2019·7 cites·18 claims
- 1788US9178138B2Method for forming a PCRAM with low reset currentGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Nov 3, 2015·5 cites·20 claims
- 1886US10495603B1High performance ISFET with ferroelectric materialGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 3, 2019·2 cites·18 claims
- 1986US9029231B2Fin selector with gated RRAMTOH ENG HUAT·Filed 2013·Granted May 12, 2015·4 cites·8 claims
- 2085US10163979B2Selector-resistive random access memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 2185US8138053B2Method of forming source and drain of field-effect-transistor and structure thereofUTOMO HENRY K·Filed 2007·Granted Mar 20, 2012·12 cites·20 claims
- 2284US11374135B2Sensor and method of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Jun 28, 2022·1 cites·12 claims
- 2384US11050426B1Logic gate devices and methods of forming a logic gate deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jun 29, 2021·2 cites·17 claims
- 2484US10724983B2Sensor device and a method for forming the sensor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 2584US9263132B2Double gated flash memoryTAN SHYUE SENG·Filed 2011·Granted Feb 16, 2016·6 cites·9 claims
- 2684US8647946B2Control gateTAN SHYUE SENG·Filed 2009·Granted Feb 11, 2014·8 cites·23 claims
- 2783US9312268B2Integrated circuits with FinFET nonvolatile memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Apr 12, 2016·6 cites·19 claims
- 2881US12142673B2Transistor with wrap-around extrinsic baseGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 2981US10700277B1Memory device and a method for forming the memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Jun 30, 2020·2 cites·17 claims
- 3081US8674332B2RRAM device with an embedded selector structure and methods of making sameTOH ENG HUAT·Filed 2012·Granted Mar 18, 2014·5 cites·38 claims
- 3181US7562318B2Test structure for automatic dynamic negative-bias temperature instability testingCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Jul 14, 2009·6 cites·22 claims
- 3280US9276206B2Scalable and reliable non-volatile memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Mar 1, 2016·4 cites·23 claims
- 3380US8993407B2Compact localized RRAM cell structure realized by spacer technologyTAN SHYUE SENG·Filed 2012·Granted Mar 31, 2015·3 cites·13 claims
- 3479US9825223B2Fin selector with gated RRAMGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Nov 21, 2017·2 cites·8 claims
- 3579US8536558B1RRAM structure with improved memory marginTAN SHYUE SENG JASON·Filed 2012·Granted Sep 17, 2013·5 cites·10 claims
- 3679US2025006824A1Transistor with wrap-around extrinsic baseGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 3778US11585703B2On-chip temperature sensing with non-volatile memory elementsGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Feb 21, 2023·2 cites·13 claims
- 3878US10950661B2Integrated circuits with resistive non-volatile memory cells and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 3978US10090311B1Cost-free MTP memory structure with reduced terminal voltagesGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Oct 2, 2018·3 cites·20 claims
- 4078US9515152B2Simple and cost-free MTP structureGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Dec 6, 2016·5 cites·20 claims
- 4178US9362374B2Simple and cost-free MTP structureGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 7, 2016·4 cites·22 claims
- 4278US9276041B2Three dimensional RRAM device, and methods of making sameTOH ENG HUAT·Filed 2012·Granted Mar 1, 2016·3 cites·26 claims
- 4377US9368386B2Corner transistor suppressionGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Jun 14, 2016·3 cites·5 claims
- 4477US8685799B1RRAM structure at STI with Si-based selectorTAN SHYUE SENG·Filed 2012·Granted Apr 1, 2014·3 cites·16 claims
- 4577US7103861B2Test structure for automatic dynamic negative-bias temperature instability testingCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Sep 5, 2006·16 cites·8 claims
- 4677US2025046706A1Electronic fuses with a silicide layer having multiple thicknessesGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 4776US10825984B1Sensors including dummy elements arranged about a sensing elementGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Nov 3, 2020·1 cites·20 claims
- 4876US9184215B2RRAM structure at STI with Si-based selectorGLOBALFOUNDIRES SINGAPORE PTE LTD·Filed 2014·Granted Nov 10, 2015·3 cites·20 claims
- 4975US11823889B2Sensor and method of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
- 5075US10840253B2Increased gate coupling effect in multigate transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Nov 17, 2020·1 cites·20 claims
Showing the top 50 of 239 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →