Inventor · disambiguated record
Shigekazu Tomai
Also filed as: TANAKA LEGAL REPRESENTATIVE TOKIE · TOMAI SHIGEKAZU
36 granted patents·24 pending applications·668 citations·filing 2004–2025
97Inventor score
Top patents by PatentIndex Score
60 records- 0199US8981369B2Field effect transistor using oxide semiconductor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2013·Granted Mar 17, 2015·86 cites·7 claims
- 0299US8384077B2Field effect transistor using oxide semicondutor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2008·Granted Feb 26, 2013·247 cites·12 claims
- 0398US8791457B2Oxide semiconductor field effect transistor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2013·Granted Jul 29, 2014·52 cites·16 claims
- 0498US8723175B2Oxide semiconductor field effect transistor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2013·Granted May 13, 2014·60 cites·14 claims
- 0598US8461583B2Oxide semiconductor field effect transistor and method for manufacturing the sameYANO KOKI·Filed 2008·Granted Jun 11, 2013·81 cites·17 claims
- 0695US8038857B2Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processesIDEMITSU KOSAN CO·Filed 2005·Granted Oct 18, 2011·32 cites·7 claims
- 0794US8445903B2Thin film transistor having a crystalline semiconductor film including indium oxide which contains a hydrogen element and method for manufacturing sameINOUE KAZUYOSHI·Filed 2009·Granted May 21, 2013·30 cites·8 claims
- 0893US7648657B2In Sm oxide sputtering targetIDEMITSU KOSAN CO·Filed 2006·Granted Jan 19, 2010·18 cites·16 claims
- 0992US8704217B2Field effect transistor, semiconductor device and semiconductor device manufacturing methodYANO KOKI·Filed 2009·Granted Apr 22, 2014·24 cites·20 claims
- 1085US7612850B2Semi-transmissive/semi-reflective electrode substrate, method for manufacturing same, and liquid crystal display using such semi-transmissive/semi-reflective electrode substrateINOUE KAZUYOSHI·Filed 2005·Granted Nov 3, 2009·8 cites·17 claims
- 1184US11987504B2Garnet compound, sintered body and sputtering target containing sameIDEMITSU KOSAN CO·Filed 2022·Granted May 21, 2024·0 cites·10 claims
- 1283US11447421B2Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensorIDEMITSU KOSAN CO·Filed 2018·Granted Sep 20, 2022·1 cites·12 claims
- 1380US9178076B2Thin-film transistorTSURUMA YUKI·Filed 2012·Granted Nov 3, 2015·7 cites·10 claims
- 1480US8773628B2Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processesINOUE KAZUYOSHI·Filed 2011·Granted Jul 8, 2014·4 cites·5 claims
- 1579US8785927B2Laminate structure including oxide semiconductor thin film layer, and thin film transistorEBATA KAZUAKI·Filed 2011·Granted Jul 22, 2014·5 cites·6 claims
- 1679US2022388908A1Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensorIDEMITSU KOSAN CO·Filed 2022·Application pending·0 cites
- 1778US2025236560A1Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensorIDEMITSU KOSAN CO·Filed 2025·Application pending·0 cites
- 1876US8507111B2Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processesINOUE KAZUYOSHI·Filed 2011·Granted Aug 13, 2013·3 cites·19 claims
- 1975US10340356B2Laminated articleIDEMITSU KOSAN CO·Filed 2016·Granted Jul 2, 2019·2 cites·22 claims
- 2073US9767998B2Sputtering targetEBATA KAZUAKI·Filed 2012·Granted Sep 19, 2017·3 cites·19 claims
- 2171US11447398B2Garnet compound, sintered body and sputtering target containing sameIDEMITSU KOSAN CO·Filed 2017·Granted Sep 20, 2022·0 cites·10 claims
- 2267US11189737B2Laminated bodyIDEMITSU KOSAN CO·Filed 2016·Granted Nov 30, 2021·1 cites·22 claims
- 2365US10374045B2Semiconductor device and electric apparatus using sameIDEMITSU KOSAN CO·Filed 2016·Granted Aug 6, 2019·1 cites·20 claims
- 2464US9243318B2Sintered material, and process for producing sameTOMAI SHIGEKAZU·Filed 2012·Granted Jan 26, 2016·2 cites·6 claims
- 2563US11434172B2Sintered bodyIDEMITSU KOSAN CO·Filed 2019·Granted Sep 6, 2022·0 cites·8 claims
- 2663US9153438B2Sintered oxide body, target comprising the same, and oxide semiconductor thin filmEBATA KAZUAKI·Filed 2011·Granted Oct 6, 2015·1 cites·10 claims
- 2760US2025326692A1Oxide sintered bodyIDEMITSU KOSAN CO·Filed 2023·Application pending·0 cites
- 2860US2022356358A1Composition and composite molded article containing sameIDEMITSU KOSAN CO·Filed 2020·Application pending·0 cites
- 2960US2024317778A1Compound, composition, electroconductive aid, electrode, and laminateIDEMITSU KOSAN CO·Filed 2022·Application pending·0 cites
- 3059US2021355033A1Oxide sintered body, sputtering target and oxide semiconductor filmIDEMITSU KOSAN CO·Filed 2021·Application pending·0 cites
- 3156US2022154013A1Solution composition comprising conductive polymerIDEMITSU KOSAN CO·Filed 2020·Application pending·0 cites
- 3255US2025241093A1Reflective electrode for an emitting deviceIDEMITSU KOSAN CO·Filed 2022·Application pending·0 cites
- 3354US9691910B2Oxide semiconductor substrate and schottky barrier diodeIDEMITSU KOSAN CO·Filed 2014·Granted Jun 27, 2017·0 cites·36 claims
- 3454US9570631B2Oxide semiconductor substrate and schottky barrier diodeIDEMITSU KOSAN CO·Filed 2014·Granted Feb 14, 2017·0 cites·30 claims
- 3552US11078120B2Oxide sintered body, sputtering target and oxide semiconductor filmIDEMITSU KOSAN CO·Filed 2017·Granted Aug 3, 2021·0 cites·15 claims
- 3651US11769840B2Oxide semiconductor substrate and schottky barrier diodeIDEMITSU KOSAN CO·Filed 2017·Granted Sep 26, 2023·0 cites·16 claims
- 3751US9269573B2Thin film transistor having crystalline indium oxide semiconductor filmINOUE KAZUYOSHI·Filed 2008·Granted Feb 23, 2016·0 cites·15 claims
- 3851US2022356118A1Oxide sintered bodyIDEMITSU KOSAN CO·Filed 2020·Application pending·0 cites
- 3950US11328911B2Oxide sintered body and sputtering targetIDEMITSU KOSAN CO·Filed 2017·Granted May 10, 2022·0 cites·12 claims
- 4050US8664136B2Indium oxide sintered compact and sputtering targetINOUE KAZUYOSHI·Filed 2009·Granted Mar 4, 2014·0 cites·25 claims
- 4150US8153033B2Amorphous transparent conductive film, target and production method for amorphous conductive filmSHIMANE YUKIO·Filed 2006·Granted Apr 10, 2012·0 cites·10 claims
- 4249US12439742B2Light emitting device with electrode having specified molar ratio of magnesium to zincIDEMITSU KOSAN CO·Filed 2019·Granted Oct 7, 2025·0 cites·19 claims
- 4349US2021079160A1Composition, and redox material using the sameIDEMITSU KOSAN CO·Filed 2019·Application pending·0 cites
- 4449US2013234134A1Thin film transistor and method for manufacturing sameIDEMITSU KOSAN CO·Filed 2013·Application pending·0 cites
- 4548US10636914B2Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistorIDEMITSU KOSAN CO·Filed 2016·Granted Apr 28, 2020·0 cites·19 claims
- 4648US2011006297A1Patterned crystalline semiconductor thin film, method for producing thin film transistor and field effect transistorIDEMITSU KOSAN CO·Filed 2008·Application pending·0 cites
- 4747US9039944B2Sputtering targetEBATA KAZUAKI·Filed 2012·Granted May 26, 2015·0 cites·14 claims
- 4847US2017141240A1Oxide semiconductor substrate and schottky barrier diodeIDEMITSU KOSAN CO·Filed 2016·Application pending·0 cites
- 4946US8529739B2Indium oxide-cerium oxide based sputtering target, transparent electroconductive film, and process for producing a transparent electroconductive filmINOUE KAZUYOSHI·Filed 2005·Granted Sep 10, 2013·0 cites·3 claims
- 5045US2009066228A1Organic electroluminescence elementIDEMITSU KOSAN CO·Filed 2006·Application pending·0 cites
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →