Inventor · disambiguated record
Shigeo Tooi
Also filed as: TOOI SHIGEO
6 granted patents·37 citations·filing 2002–2008
79Inventor score
Top patents by PatentIndex Score
6 records- 0172US6649995B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 18, 2003·20 cites·7 claims
- 0263US8129818B2Power deviceTOOI SHIGEO·Filed 2008·Granted Mar 6, 2012·4 cites·3 claims
- 0360US6831351B2Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base materialMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 14, 2004·10 cites·4 claims
- 0459US7772669B2Semiconductor device having an improved structure for high withstand voltageMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Aug 10, 2010·2 cites·11 claims
- 0540US7057298B2Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base materialMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Jun 6, 2006·1 cites·3 claims
- 0637US6861730B2Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base materialMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Mar 1, 2005·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →