Inventor · disambiguated record
Sheng-Wei Tsaur
Also filed as: TSAUR SHENG-WEI
3 granted patents·48 citations·filing 2001–2001
70Inventor score
Files withTAIWAN SEMICONDUCTOR MFG3
Top patents by PatentIndex Score
3 records- 0179US6468863B2Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 22, 2002·31 cites·9 claims
- 0269US6387757B1Sacrificial self aligned spacer layer ion implant mask method for forming a split gate field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 14, 2002·15 cites·13 claims
- 0344US6544828B1Adding a poly-strip on isolation's edge to improve endurance of high voltage NMOS on EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 8, 2003·2 cites·15 claims
Join the waitlist — get patent alerts
Get an alert when Sheng-Wei Tsaur files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →