Inventor · disambiguated record
Shunsaku Ueta
Also filed as: UETA SHUNSAKU
11 granted patents·12 pending applications·3 citations·filing 2012–2023
79Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES23
Top patents by PatentIndex Score
23 records- 0187US9777401B2Method for producing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Oct 3, 2017·2 cites·9 claims
- 0276US11535953B2Silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Dec 27, 2022·1 cites·6 claims
- 0372US11781246B2Silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Oct 10, 2023·0 cites·7 claims
- 0467US12116696B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Oct 15, 2024·0 cites·8 claims
- 0563US10184191B2Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jan 22, 2019·0 cites·11 claims
- 0659US12227876B2Silicon carbide single crystal and silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Feb 18, 2025·0 cites·10 claims
- 0759US2025146171A1Silicon carbide substrate, method of manufacturing silicon carbide substrate, and manufacturing apparatus for silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2023·Application pending·0 cites
- 0856US11913135B2Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Feb 27, 2024·0 cites·17 claims
- 0954US2014299048A1Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 1054US2025203985A1Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2023·Application pending·0 cites
- 1153US9631296B2Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 25, 2017·0 cites·5 claims
- 1250US2024234509A9Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 1350US2025006796A1Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 1450US2024145229A1Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 1550US2025056856A1Silicon carbide substrate, method of manufacturing silicon carbide semiconductor device, and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 1648US2017152609A1Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 1746US2022403550A1Silicon carbide substrate and method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Application pending·0 cites
- 1844US10361273B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jul 23, 2019·0 cites·13 claims
- 1943US2014287226A1Ingot, silicon carbide substrate, and method for producing ingotSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 2042US10319821B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jun 11, 2019·0 cites·4 claims
- 2141US9777400B2Method for producing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Oct 3, 2017·0 cites·8 claims
- 2240US2016002820A1Crucible and method for producing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 2340US2013092956A1Silicon carbide substrate, silicon carbide semiconductor device, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Shunsaku Ueta files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →