Inventor · disambiguated record
Sheng-Tsung Wang
Also filed as: WANG SHENG · WANG SHENG T · WANG SHENG-TSUNG
59 granted patents·40 pending applications·120 citations·filing 1999–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD80CHIAO SHENG MACHINERY CO LTD3REALTEK SEMICONDUCTOR CORP3LOCKHEED CORP2SHENZHEN MINDRAY BIOMEDICAL ELECTRONICS CO LTD2
Top patents by PatentIndex Score
99 records- 0196US12040273B2Semiconductor device with multi-layer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·2 cites·20 claims
- 0296US7514804B2Energy harvesting technique to support remote wireless MEMS RF sensorsLOCKHEED CORP·Filed 2006·Granted Apr 7, 2009·38 cites·23 claims
- 0395US10937884B1Gate spacer with air gap for semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·10 cites·20 claims
- 0493US11640941B2Semiconductor devices including metal gate protection and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 2, 2023·2 cites·18 claims
- 0590US7254972B1Moving mold mechanism of a pipe bending machineCHIA SHENG MACHINERY CO LTD·Filed 2006·Granted Aug 14, 2007·19 cites·3 claims
- 0689US12356688B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·1 cites·20 claims
- 0789US2025364329A1Semiconductor devices including low-k metal gate isolation and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0888US10943829B2Slot contacts and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·3 cites·20 claims
- 0988US2024379408A1Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1087US12389665B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 1187US2025364403A1Field effect transistor with source/drain via and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1285US12131942B2Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 1385US10867863B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 1484US12463096B2Semiconductor devices including low-k metal gate isolation and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1584US12463095B2Semiconductor structure with a laminated layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1683US2025366027A1Device scaling by isolation enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1783US2024347463A1Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1882US2024290661A1Slot contacts and method forming sameTAIWAN SEMICONDUSTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1982US2025366052A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2081US11908744B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 2181US2025366102A1Semiconductor devices with backside source/drain contacts and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2281US2025366172A1Transistors with different drive current characteristics in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2381US2025359260A1Self-aligned backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2481US2025366158A1Integrated circuit with backside metal gate cut for reduced coupling capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2580US12300727B2Process and structure for source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2680US12074111B2Semiconductor devices including metal gate protection and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2780US12009265B2Slot contacts and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 2880US11694921B2Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 4, 2023·0 cites·20 claims
- 2980US10755964B1Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·1 cites·20 claims
- 3080US2025359110A1Semiconductor contact structures and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3180US2024387261A1Gate contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3279US2024371773A1Semiconductor devices including metal gate protection and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3378US12057398B2Semiconductor device with multi-layer dielectric and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 3478US2024379775A1Process and structure for source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3578US2024250151A1Air spacers for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3677US10840342B2Methods of forming source/drain contacts in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·1 cites·20 claims
- 3777US2025311282A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3877US2025344426A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3976US12506066B2Field effect transistor with source/drain via and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4076US11476196B2Semiconductor device with multi-layer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 18, 2022·1 cites·20 claims
- 4176US2024379422A1Field effect transistor with multi-metal gate via and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4275US2023386916A1Gate contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4375US2025287643A1Field effect transistor with source/drain contact isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4475US2025267918A1Semiconductor device having air gap and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4575US2025185353A1Transistors with Different Drive Current Characteristics in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4674US11955535B2Methods for forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
- 4774US11508622B2Semiconductor device structure with tapered contact and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 4874US11239106B2Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 4974US2025294848A1Self-aligned backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5074US2025301742A1Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 99 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →