Inventor · disambiguated record
Sheng-Chen Wang
Also filed as: WANG SHENG-CHEN
133 granted patents·31 pending applications·399 citations·filing 2003–2025
99Inventor score
Top patents by PatentIndex Score
164 records- 0199US11587823B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·9 cites·20 claims
- 0299US11581337B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·7 cites·15 claims
- 0399US11495618B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·5 cites·20 claims
- 0499US11423966B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·23 cites·20 claims
- 0599US11404099B1Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·9 cites·20 claims
- 0699US11355516B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·11 cites·20 claims
- 0798US11776602B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·6 cites·20 claims
- 0898US11647634B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 9, 2023·4 cites·20 claims
- 0998US11527553B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
- 1098US10062784B1Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·31 cites·20 claims
- 1198US9659930B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·27 cites·20 claims
- 1297US12069868B2Gated ferroelectric memory cells for memory cell array and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·2 cites·20 claims
- 1397US11997855B2Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·3 cites·20 claims
- 1497US11903216B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 1597US11856743B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 1697US11600520B2Air gaps in memory array structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·20 claims
- 1797US11444069B23D semiconductor package including memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 1897US9997631B2Methods for reducing contact resistance in semiconductors manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·31 cites·20 claims
- 1997US9472620B1Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·17 cites·20 claims
- 2096US12172262B2Irregular mechanical motion detection systems and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·1 cites·20 claims
- 2196US12002499B2Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 2296US11910616B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 2396US11862713B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 2496US11805652B23D RAM SL/BL contact modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·2 cites·20 claims
- 2596US11744080B2Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 29, 2023·3 cites·20 claims
- 2696US10276691B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
- 2796US9954076B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 24, 2018·12 cites·20 claims
- 2896US9425317B1Fin field effect transistor (FinFET) device structure with Ge-doped inter-layer dielectric (ILD) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·19 cites·19 claims
- 2995US12070833B2Method of using polishing padTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·1 cites·12 claims
- 3095US10483266B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·9 cites·20 claims
- 3195US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
- 3295US9450046B2Semiconductor structure with fin structure and wire structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·14 cites·20 claims
- 3394US12027412B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·1 cites·20 claims
- 3494US10529725B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·6 cites·20 claims
- 3594US9481069B2Chemical mechanical polishing apparatus and polishing method using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 1, 2016·17 cites·20 claims
- 3692US10985167B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·4 cites·20 claims
- 3792US10529803B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·7 cites·20 claims
- 3892US10516033B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
- 3992US10272661B2Pad removal device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·7 cites·20 claims
- 4092US2025364028A1Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4192US2025365971A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4291US11574929B23D ferroelectric memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·20 claims
- 4391US11569264B23D RAM SL/BL contact modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
- 4491US10062688B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 28, 2018·7 cites·19 claims
- 4590US11554578B2Pad removal methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·1 cites·20 claims
- 4690US10675732B2Apparatus and method for CMP pad conditioningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 9, 2020·3 cites·20 claims
- 4790US9953836B2Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·5 cites·19 claims
- 4890US9871038B2Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·5 cites·26 claims
- 4990US2024359288A1Method of using polishing padTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5089US9449882B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·5 cites·20 claims
Showing the top 50 of 164 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →