Inventor · disambiguated record
Shao-Jyun Wu
Also filed as: WU SHAO-JYUN
17 granted patents·8 pending applications·25 citations·filing 2013–2025
90Inventor score
Top patents by PatentIndex Score
25 records- 0198US11239083B2Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·4 cites·20 claims
- 0297US11688606B2Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·2 cites·20 claims
- 0396US12002718B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 0496US10535524B1Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·9 cites·20 claims
- 0591US10872826B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·4 cites·20 claims
- 0687US12376371B2Fin Field-Effect Transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 0787US2024387178A1Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0885US12148620B2Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 0982US12237228B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 1081US9543159B2Patterning process of a semiconductor structure with a wet strippable middle layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·3 cites·20 claims
- 1179US2025359277A1Gate Bar in Isolation Region of Gate Layout and Method of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1277US2025311356A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1377US2024379378A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1476US2025318231A1Gate isolation features in semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1574US11735481B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 1674US10755945B2Metal contacts on metal gates and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·20 claims
- 1773US12336250B2Semiconductor device structure and method for forming the semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 1873US11527447B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 1972US2025133806A1Gate Bar in Isolation Region of Gate Layout and Method of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2069US12471343B2Gate isolation features in semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 2165US11081396B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 2262US2020388504A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 2357US2025169167A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2454US9059092B2Chemical dielectric formation for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·0 cites·20 claims
- 2551US9466495B2Chemical dielectric formation for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 11, 2016·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →