Inventor · disambiguated record
Shiro Yamasaki
Also filed as: YAMASAKI SHIRO
23 granted patents·548 citations·filing 1991–2009
96Inventor score
Top patents by PatentIndex Score
23 records- 0196US6040588ASemiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Mar 21, 2000·112 cites·10 claims
- 0295US6420733B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2001·Granted Jul 16, 2002·80 cites·7 claims
- 0395US6326236B1Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2000·Granted Dec 4, 2001·78 cites·2 claims
- 0494US6541293B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Apr 1, 2003·63 cites·4 claims
- 0587US6821800B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Nov 23, 2004·29 cites·4 claims
- 0685US6552376B1Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Apr 22, 2003·18 cites·15 claims
- 0776US7842133B2Single crystal growing methodNGK INSULATORS LTD·Filed 2008·Granted Nov 30, 2010·2 cites·11 claims
- 0875US5889806AGroup III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Mar 30, 1999·39 cites·7 claims
- 0974US6680957B1Group III nitride compound semiconductor laserTOYODA GOSEI KK·Filed 2000·Granted Jan 20, 2004·12 cites·21 claims
- 1073US6541798B2Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Apr 1, 2003·18 cites·4 claims
- 1167US5811319AMethods of forming electrodes on gallium nitride group compound semiconductorsTOYODA GOSEI KK·Filed 1996·Granted Sep 22, 1998·26 cites·14 claims
- 1266US6617061B2Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2002·Granted Sep 9, 2003·12 cites·3 claims
- 1363US9017479B2Nitride single crystal manufacturing apparatusIWAI MAKOTO·Filed 2008·Granted Apr 28, 2015·3 cites·5 claims
- 1462US8657955B2Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystalIWAI MAKOTO·Filed 2009·Granted Feb 25, 2014·0 cites·2 claims
- 1562US5953581AMethods for manufacturing group III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Sep 14, 1999·24 cites·5 claims
- 1658US6441450B1Acceleration sensor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 27, 2002·8 cites·16 claims
- 1757US8765313B2Fuel cell system and method of controlling sameKURITA KENJI·Filed 2007·Granted Jul 1, 2014·1 cites·11 claims
- 1855US8231729B2Apparatus for producing nitride single crystalIWAI MAKOTO·Filed 2008·Granted Jul 31, 2012·0 cites·4 claims
- 1952US6639258B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2002·Granted Oct 28, 2003·2 cites·7 claims
- 2049US6962828B1Methods for manufacturing a light-emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Nov 8, 2005·2 cites·20 claims
- 2143US6486068B2Method for manufacturing group III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1998·Granted Nov 26, 2002·10 cites·15 claims
- 2237US5196034ASemiconductor wafer cleaning apparatusMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 23, 1993·9 cites·5 claims
- 2330US6188087B1Semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Feb 13, 2001·0 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →