Inventor · disambiguated record
Shihkuang Yang
Also filed as: YANG SHIHKUANG
10 granted patents·3 pending applications·6 citations·filing 2017–2025
82Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0186US12277977B2ONON sidewall structure for memory device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 0283US10541245B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
- 0382US12009033B2ONON sidewall structure for memory device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 0482US10269815B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 0580US10510544B2Non-volatile memory semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·2 cites·17 claims
- 0680US2025210111A1ONON Sidewall Structure for Memory Device and Method for Making the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0779US2023262974A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0874US11812608B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 0973US11854621B2ONON sidewall structure for memory device and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 1073US11637113B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
- 1170US10978463B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·0 cites·20 claims
- 1261US2025391705A1Semiconductor die packages and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1359US11133188B2Non-volatile memory semiconductor device with electrostatic discharge protection, planarization layers, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →