Inventor · disambiguated record
Sheng-Jier Yang
Also filed as: YANG SHENG · YANG SHENG-JIER
13 granted patents·3 pending applications·154 citations·filing 2006–2025
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8TAIWAN SEMICONDUCTOR MFG6WANG YEN-SEN1YANGTZE MEMORY TECH CO LTD1
Top patents by PatentIndex Score
16 records- 0196US7958465B2Dummy pattern design for reducing device performance driftTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 7, 2011·118 cites·20 claims
- 0291US10466731B2Two-transistor bandgap reference circuit and FinFET device suited for sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 5, 2019·7 cites·20 claims
- 0391US8350330B2Dummy pattern design for reducing device performance driftTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 8, 2013·7 cites·16 claims
- 0485US7943961B2Strain bars in stressed layers of MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 17, 2011·12 cites·19 claims
- 0583US8362573B2Integrated circuits and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·6 cites·20 claims
- 0678US2025359346A1Protection against plasma induced damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0775US2025063826A1Protection against plasma induced damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0864US7598130B2Method for reducing layout-dependent variations in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 6, 2009·2 cites·19 claims
- 0963US11984483B2Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 1063US11150680B2Two-transistor bandgap reference circuit and FinFET device suited for sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 1163US10522643B2Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·1 cites·20 claims
- 1257US10534393B2Two-transistor bandgap reference circuit and FinFET device suited for sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·8 claims
- 1356US11616131B2Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 28, 2023·0 cites·20 claims
- 1456US2025344469A1Semiconductor structures and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1555US8389316B2Strain bars in stressed layers of MOS devicesWANG YEN-SEN·Filed 2011·Granted Mar 5, 2013·1 cites·11 claims
- 1650US9385213B2Integrated circuits and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 5, 2016·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →