Inventor · disambiguated record
Shuichiro Yasuda
Also filed as: YASUDA SHUICHIRO
44 granted patents·6 pending applications·144 citations·filing 2003–2020
97Inventor score
Files withSONY CORP15MICRON TECHNOLOGY INC6YASUDA SHUICHIRO6OHBA KAZUHIRO5SONY SEMICONDUCTOR SOLUTIONS CORP5
Top patents by PatentIndex Score
50 records- 0188US8427860B2Memory component, memory device, and method of operating memory deviceOHBA KAZUHIRO·Filed 2011·Granted Apr 23, 2013·10 cites·22 claims
- 0285US9209388B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 8, 2015·4 cites·29 claims
- 0385US8835895B2Memory device and fabrication process thereofSONY CORP·Filed 2013·Granted Sep 16, 2014·8 cites·2 claims
- 0485US8547735B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2009·Granted Oct 1, 2013·10 cites·7 claims
- 0585US8476614B2Memory device and fabrication process thereofSUMINO JUN·Filed 2010·Granted Jul 2, 2013·9 cites·6 claims
- 0684US7863594B2Switching deviceNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Jan 4, 2011·13 cites·12 claims
- 0779US9058873B2Memory element having ion source layers with different contents of a chalcogen elementSHIMUTA MASAYUKI·Filed 2012·Granted Jun 16, 2015·8 cites·12 claims
- 0879US8295074B2Memory cellYASUDA SHUICHIRO·Filed 2008·Granted Oct 23, 2012·11 cites·19 claims
- 0978US8921821B2Memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 30, 2014·2 cites·6 claims
- 1077US8699260B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2012·Granted Apr 15, 2014·5 cites·14 claims
- 1177US8569732B2Memory element and memory deviceYASUDA SHUICHIRO·Filed 2011·Granted Oct 29, 2013·5 cites·16 claims
- 1273US8730709B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2013·Granted May 20, 2014·3 cites·14 claims
- 1371US9543514B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2015·Granted Jan 10, 2017·2 cites·12 claims
- 1468US11462685B2Switch device, storage apparatus, and memory system incorporating boron and carbonSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Oct 4, 2022·2 cites·12 claims
- 1568US10923658B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 16, 2021·0 cites·12 claims
- 1668US9240549B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2014·Granted Jan 19, 2016·2 cites·20 claims
- 1768US8492740B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2008·Granted Jul 23, 2013·6 cites·35 claims
- 1867US10658588B2Memory cell switch deviceYASUDA SHUICHIRO·Filed 2017·Granted May 19, 2020·2 cites·12 claims
- 1962US8912516B2Memory element with ion source layer and memory deviceOHBA KAZUHIRO·Filed 2012·Granted Dec 16, 2014·2 cites·14 claims
- 2062US7034750B2Antenna mounting printed-circuit boardSONY CHEMICALS CORP·Filed 2003·Granted Apr 25, 2006·14 cites·5 claims
- 2161US8885385B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2012·Granted Nov 11, 2014·2 cites·14 claims
- 2261US8710482B2Memory component and memory deviceYASUDA SHUICHIRO·Filed 2011·Granted Apr 29, 2014·2 cites·14 claims
- 2361US8369128B2Storage device and information rerecording methodSONY CORP·Filed 2008·Granted Feb 5, 2013·4 cites·16 claims
- 2457US10388871B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 20, 2019·0 cites·10 claims
- 2557US9508931B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Nov 29, 2016·0 cites·10 claims
- 2656US8618527B2Memory element and memory deviceHATTORI SHINNOSUKE·Filed 2011·Granted Dec 31, 2013·3 cites·8 claims
- 2754US8816313B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2009·Granted Aug 26, 2014·0 cites·11 claims
- 2854US8213214B2Storage device and information rerecording methodTSUSHIMA TOMOHITO·Filed 2008·Granted Jul 3, 2012·3 cites·18 claims
- 2953US9444042B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 13, 2016·0 cites·21 claims
- 3052US8873281B2Memory element and memory deviceSONY CORP·Filed 2013·Granted Oct 28, 2014·0 cites·16 claims
- 3152US8546782B2Memory element and memory deviceYASUDA SHUICHIRO·Filed 2011·Granted Oct 1, 2013·0 cites·8 claims
- 3252US8363447B2Storage device and information recording and verification methodSONY CORP·Filed 2008·Granted Jan 29, 2013·2 cites·18 claims
- 3352US6940458B2Electronic equipment and antenna mounting printed-circuit boardSONY CHEMICALS CORP NEAGARI PL·Filed 2003·Granted Sep 6, 2005·10 cites·18 claims
- 3452US2022162742A1Sputtering target and method of manufacturing the same, and memory device manufacturing methodSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Application pending·0 cites
- 3551US9263670B2Memory element and memory deviceSONY CORP·Filed 2013·Granted Feb 16, 2016·0 cites·8 claims
- 3648US9231200B2Memory element and memory deviceSONY CORP·Filed 2014·Granted Jan 5, 2016·0 cites·16 claims
- 3747US9356232B2Method of making memory element with ion source layer comprised of two or more unit IO source layersSONY CORP·Filed 2014·Granted May 31, 2016·0 cites·18 claims
- 3847US9203018B2Memory element and memory deviceSONY CORP·Filed 2014·Granted Dec 1, 2015·0 cites·17 claims
- 3945US8847194B2Memory component including an ion source layer and a resistance change layer, and a memory device using the sameSONY CORP·Filed 2013·Granted Sep 30, 2014·0 cites·14 claims
- 4044US2021036221A1Switching device and storage unit, and memory systemSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Application pending·0 cites
- 4143US10490740B2Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereofSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2013·Granted Nov 26, 2019·0 cites·20 claims
- 4243US8350248B2Memory element and memory deviceSONY CORP·Filed 2009·Granted Jan 8, 2013·0 cites·15 claims
- 4342US2020066794A1Memory cell switch deviceSONY CORP·Filed 2018·Application pending·0 cites
- 4441US9202560B2Memory element and memory device with ion source layer and resistance change layerMIZUGUCHI TETSUYA·Filed 2012·Granted Dec 1, 2015·0 cites·11 claims
- 4541US8796657B2Memory element and memory deviceYASUDA SHUICHIRO·Filed 2012·Granted Aug 5, 2014·0 cites·11 claims
- 4641US2014306172A1Integrated circuit system with non-volatile memory and method of manufacture thereofSONY CORP·Filed 2013·Application pending·0 cites
- 4739US2016104840A1Resistive memory with a thermally insulating regionCOOK BETH·Filed 2014·Application pending·0 cites
- 4838US2021005252A1Cross point device and storage apparatusSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Application pending·0 cites
- 4937US9112149B2Memory element and method of manufacturing the same, and memory deviceSEI HIROAKI·Filed 2011·Granted Aug 18, 2015·0 cites·13 claims
- 5035US8687404B2Memory element and drive method for the same, and memory deviceSHIMUTA MASAYUKI·Filed 2011·Granted Apr 1, 2014·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →