Inventor · disambiguated record
Sheng-Fu Yu
Also filed as: YU SHENG-FU
7 granted patents·4 pending applications·77 citations·filing 2007–2025
82Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8AIROHA TECH CORP1SINO AMERICAN SILICON PROD INC1UNIV CHANG GUNG1
Top patents by PatentIndex Score
11 records- 0191US9252233B2Air-gap offset spacer in FinFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 2, 2016·52 cites·20 claims
- 0288US9159812B1Fin sidewall removal to enlarge epitaxial source/drain volumeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 13, 2015·9 cites·20 claims
- 0386US2025359309A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0484US7408304B1Apparatus for power circuit of light emitting diodeUNIV CHANG GUNG·Filed 2007·Granted Aug 5, 2008·9 cites·4 claims
- 0581US9570561B2Modified channel position to suppress hot carrier injection in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·5 cites·19 claims
- 0678US2024387536A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0776US9490254B2Fin sidewall removal to enlarge epitaxial source/drain volumeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 8, 2016·2 cites·20 claims
- 0870US12324230B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·14 claims
- 0956US2024405099A1Optimized fin height for finfet transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1044US2011003420A1Fabrication method of gallium nitride-based compound semiconductorSINO AMERICAN SILICON PROD INC·Filed 2009·Application pending·0 cites
- 1139US9722658B2Control method of RF switch moduleAIROHA TECH CORP·Filed 2016·Granted Aug 1, 2017·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →