Inventor · disambiguated record
Shao-Chi Yu
Also filed as: YU SHAO-CHI
20 granted patents·86 citations·filing 2012–2022
93Inventor score
Top patents by PatentIndex Score
20 records- 0197US9567204B2Microelectrochemical systems (MEMS) device having a seal layer arranged over or lining a hole in fluid communication with a cavity of the MEMS deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·18 cites·20 claims
- 0295US10392244B2Method for sealing a cavity of a microelectromechanical systems (MEMS) device using a seal layer covering or lining a hole in fluid communication with the cavityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 27, 2019·9 cites·20 claims
- 0395US9656857B2Microelectromechanical systems (MEMS) devices at different pressuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·13 cites·20 claims
- 0492US10131540B2Structure and method to mitigate soldering offset for wafer-level chip scale package (WLCSP) applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 20, 2018·9 cites·20 claims
- 0588US10155660B2Device and method for protecting FEOL element and BEOL elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 18, 2018·4 cites·20 claims
- 0687US9845236B2Monolithic MEMS platform for integrated pressure, temperature, and gas sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 19, 2017·4 cites·20 claims
- 0785US9202792B2Structure and method of providing a re-distribution layer (RDL) and a through-silicon via (TSV)TAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 1, 2015·7 cites·18 claims
- 0884US9269609B2Semiconductor isolation structure with air gaps in deep trenchesSHUE HONG-SENG·Filed 2012·Granted Feb 23, 2016·10 cites·20 claims
- 0981US10049941B2Semiconductor isolation structure with air gaps in deep trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·3 cites·20 claims
- 1078US12297103B2Device for protecting FEOL element and BEOL elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 1176US9856139B2Microelectromechanical systems (MEMS) devices at different pressuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·1 cites·20 claims
- 1276US8558330B2Deep well process for MEMS pressure sensorYU SHAO-CHI·Filed 2012·Granted Oct 15, 2013·5 cites·20 claims
- 1373US9776858B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·2 cites·20 claims
- 1471US10464808B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·1 cites·20 claims
- 1570US11345591B2Device for protecting FEOL element and BEOL elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·0 cites·20 claims
- 1665US10508028B2Device for protecting FEOL element and BEOL elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 1763US10981781B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 1853US9714166B2Thin film structure for hermetic sealingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 25, 2017·0 cites·21 claims
- 1951US9093520B2High-voltage super junction by trench and epitaxial dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 28, 2015·0 cites·12 claims
- 2046US9614031B2Methods for forming a high-voltage super junction by trench and epitaxial dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →