Inventor · disambiguated record
Simon Buehlmann
Also filed as: BUEHLMANN SIMON
10 granted patents·3 pending applications·13 citations·filing 2006–2012
82Inventor score
Top patents by PatentIndex Score
13 records- 0180US8206803B2Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage mediumHONG SEUNG-BUM·Filed 2007·Granted Jun 26, 2012·4 cites·48 claims
- 0273US7901804B2Ferroelectric media manufacturing method thereof and information storage device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·2 cites·16 claims
- 0371US7660146B2Ferroelectric recording mediumSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 9, 2010·4 cites·7 claims
- 0463US7449346B2Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·2 cites·23 claims
- 0558US7885169B2Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·0 cites·23 claims
- 0655US7923262B2Method of manufacturing patterned ferroelectric mediaSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 12, 2011·1 cites·23 claims
- 0755US7787351B2Bit recording process on ferroelectric medium using probe or small conductive structure and recording medium thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 31, 2010·0 cites·26 claims
- 0852US7897415B2Ferroelectric recording medium and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 1, 2011·0 cites·15 claims
- 0951US2009220822A1Ferroelectric recording medium and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1050US8642155B2Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage mediumHONG SEUNG-BUM·Filed 2012·Granted Feb 4, 2014·0 cites·23 claims
- 1147US7440302B2Ferroelectric information storage device and method of writing/reading informationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·0 cites·15 claims
- 1241US2008205252A1Ferroelectric information storage medium and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1340US2008102321A1Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →