Inventor · disambiguated record
Simon Chooi
Also filed as: CHOOI SIMON · CHOOI SIMON YEW-MENG
94 granted patents·6 pending applications·3,833 citations·filing 1996–2009
99Inventor score
Top patents by PatentIndex Score
100 records- 0199US6284657B1Non-metallic barrier formation for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Sep 4, 2001·190 cites·20 claims
- 0298US6376353B1Aluminum and copper bimetallic bond pad scheme for copper damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 23, 2002·319 cites·52 claims
- 0398US6348407B1Method to improve adhesion of organic dielectrics in dual damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Feb 19, 2002·250 cites·34 claims
- 0497US6475908B1Dual metal gate process: metals and their silicidesCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Nov 5, 2002·128 cites·42 claims
- 0597US6287979B1Method for forming an air gap as low dielectric constant material using buckminsterfullerene as a porogen in an air bridge or a sacrificial layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Sep 11, 2001·140 cites·29 claims
- 0696US6358842B1Method to form damascene interconnects with sidewall passivation to protect organic dielectricsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 19, 2002·141 cites·30 claims
- 0796US6352917B1Reversed damascene process for multiple level metal interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 5, 2002·140 cites·34 claims
- 0896US6265321B1Air bridge process for forming air gapsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 24, 2001·148 cites·37 claims
- 0995US6458695B1Methods to form dual metal gates by incorporating metals and their conductive oxidesCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 1, 2002·83 cites·30 claims
- 1095US6040243AMethod to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusionCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Mar 21, 2000·250 cites·20 claims
- 1194US6683002B1Method to create a copper diffusion deterrent interfaceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jan 27, 2004·71 cites·7 claims
- 1294US6436824B1Low dielectric constant materials for copper damasceneCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Aug 20, 2002·175 cites·28 claims
- 1394US6424044B1Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallizationCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jul 23, 2002·99 cites·13 claims
- 1492US6486080B2Method to form zirconium oxide and hafnium oxide for high dielectric constant materialsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Nov 26, 2002·65 cites·20 claims
- 1592US6372636B1Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damasceneCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 16, 2002·70 cites·36 claims
- 1691US6750519B2Dual metal gate process: metals and their silicidesCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jun 15, 2004·45 cites·8 claims
- 1791US6352921B1Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallizationCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 5, 2002·64 cites·20 claims
- 1890US6350675B1Integration of silicon-rich material in the self-aligned via approach of dual damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Feb 26, 2002·55 cites·44 claims
- 1989US6303447B1Method for forming an extended metal gate using a damascene processCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Oct 16, 2001·51 cites·21 claims
- 2089US6165891ADamascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layerCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Dec 26, 2000·87 cites·40 claims
- 2188US6489233B2Non-metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Dec 3, 2002·36 cites·16 claims
- 2287US6566260B2Non-metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted May 20, 2003·32 cites·19 claims
- 2387US6261942B1Dual metal-oxide layer as air bridgeCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 17, 2001·42 cites·51 claims
- 2486US6417088B1Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·44 cites·22 claims
- 2586US6378759B1Method of application of conductive cap-layer in flip-chip, COB, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·37 cites·17 claims
- 2685US6690091B1Damascene structure with reduced capacitance using a boron carbon nitride passivation layer, etch stop layer, and/or cap layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Feb 10, 2004·29 cites·7 claims
- 2785US6534388B1Method to reduce variation in LDD series resistanceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 18, 2003·37 cites·10 claims
- 2885US6331479B1Method to prevent degradation of low dielectric constant material in copper damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Dec 18, 2001·84 cites·23 claims
- 2984US7005716B2Dual metal gate process: metals and their silicidesCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Feb 28, 2006·25 cites·4 claims
- 3084US6762085B2Method of forming a high performance and low cost CMOS deviceCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jul 13, 2004·36 cites·27 claims
- 3184US6720204B2Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·38 cites·18 claims
- 3284US6465888B2Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damasceneCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Oct 15, 2002·33 cites·7 claims
- 3383US6677652B2Methods to form dual metal gates by incorporating metals and their conductive oxidesCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jan 13, 2004·24 cites·4 claims
- 3483US6429122B2Non metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Aug 6, 2002·25 cites·26 claims
- 3580US6475810B1Method of manufacturing embedded organic stop layer for dual damascene patterningCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Nov 5, 2002·24 cites·24 claims
- 3679US6531390B2Non-metallic barrier formations for copper damascene type interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Mar 11, 2003·19 cites·25 claims
- 3778US6540841B1Method and apparatus for removing contaminants from the perimeter of a semiconductor substrateCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 1, 2003·13 cites·12 claims
- 3878US6429117B1Method to create copper traps by modifying treatment on the dielectrics surfaceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 6, 2002·21 cites·34 claims
- 3978US5858870AMethods for gap fill and planarization of intermetal dielectricsCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Jan 12, 1999·66 cites·18 claims
- 4077US6271115B1Post metal etch photoresist strip methodCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 7, 2001·21 cites·24 claims
- 4176US6531386B1Method to fabricate dish-free copper interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Mar 11, 2003·23 cites·45 claims
- 4276US6387765B2Method for forming an extended metal gate using a damascene processCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted May 14, 2002·19 cites·11 claims
- 4374US6340608B1Method of fabricating copper metal bumps for flip-chip or chip-on-board IC bonding on terminating copper padsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jan 22, 2002·21 cites·11 claims
- 4474US6225202B1Selective etching of unreacted nickel after salicidationCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted May 1, 2001·17 cites·29 claims
- 4573US6797605B2Method to improve adhesion of dielectric films in damascene interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Sep 28, 2004·17 cites·19 claims
- 4673US6339021B1Methods for effective nickel silicide formationCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jan 15, 2002·19 cites·22 claims
- 4772US6350689B1Method to remove copper contamination by using downstream oxygen and chelating agent plasmaCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Feb 26, 2002·15 cites·40 claims
- 4872US6261954B1Method to deposit a copper layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 17, 2001·12 cites·17 claims
- 4971US6891233B2Methods to form dual metal gates by incorporating metals and their conductive oxidesCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted May 10, 2005·15 cites·4 claims
- 5070US6069069AMethod for planarizing a low dielectric constant spin-on polymer using nitride etch stopCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted May 30, 2000·38 cites·26 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →