Inventor · disambiguated record
Si Ping Hu
Also filed as: HU SI PING
26 granted patents·2 pending applications·68 citations·filing 2018–2024
95Inventor score
Files withYANGTZE MEMORY TECH CO LTD28
Top patents by PatentIndex Score
28 records- 0194US10580788B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 3, 2020·14 cites·20 claims
- 0292US10680003B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
- 0392US10672711B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·19 claims
- 0491US11276642B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·19 claims
- 0591US10763158B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 1, 2020·6 cites·15 claims
- 0691US10679941B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
- 0790US11322392B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 3, 2022·2 cites·5 claims
- 0890US10748851B1Hybrid bonding using dummy bonding contacts and dummy interconnectsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 18, 2020·6 cites·20 claims
- 0989US11462503B2Hybrid bonding using dummy bonding contactsYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·10 claims
- 1089US11289422B2Bonding alignment marks at bonding in interfaceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 29, 2022·6 cites·14 claims
- 1188US11205619B2Hybrid bonding using dummy bonding contacts and dummy interconnectsYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 21, 2021·2 cites·9 claims
- 1286US2025031366A1Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1384US11177231B2Bonding contacts having capping layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Nov 16, 2021·4 cites·17 claims
- 1483US11145666B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 12, 2021·1 cites·20 claims
- 1582US11049834B2Hybrid bonding using dummy bonding contactsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 29, 2021·3 cites·20 claims
- 1681US12137558B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 1780US10796993B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 6, 2020·1 cites·20 claims
- 1876US12010838B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 1975US11996322B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 2075US11670543B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jun 6, 2023·0 cites·16 claims
- 2172US11791265B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 2270US2023317665A1Bonding contacts having capping layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2366US11876049B2Bonding alignment marks at bonding interfaceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 16, 2024·0 cites·16 claims
- 2466US11715718B2Bonding contacts having capping layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·20 claims
- 2563US11101276B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·18 claims
- 2662US11056387B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 6, 2021·0 cites·20 claims
- 2755US10651087B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 12, 2020·0 cites·10 claims
- 2846US10607887B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 31, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →