Inventor · disambiguated record
Sih-Jie Liu
Also filed as: LIU SIH-JIE
4 granted patents·14 pending applications·1 citations·filing 2019–2025
61Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD18
Top patents by PatentIndex Score
18 records- 0185US11348792B2Reduce well dopant loss in FinFETs through co-implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 31, 2022·1 cites·20 claims
- 0281US2025366112A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0380US2025359191A1Field effect transistor with recrystallized source/drains and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0480US2024249944A1Reduce well dopant loss in finfets through co-implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0578US2025351398A1Nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0677US11978634B2Reduce well dopant loss in FinFETs through co-implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 0777US2025338560A1Method to achieve low contact resistance and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0874US2025338557A1Method to achieve low contact resistance and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0973US2025344420A1Nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1072US2025169132A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1172US2025113551A1Field effect transistor with recrystallized source/drains and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1268US2025218856A1Method and Device to Reduce Epitaxial Defects Due to Contact Stress Upon a Semiconductor WaferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1364US10930507B2Reduce well dopant loss in FinFETs through co-implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·0 cites·20 claims
- 1459US12283515B2Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 22, 2025·0 cites·20 claims
- 1557US2025126859A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1657US2025374611A1Protective hard mask and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1757US2025287666A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1850US2023387251A1Gate profile modulation for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →