Inventor · disambiguated record
Siegfried Mantl
Also filed as: MANTL SIEGFRIED
14 granted patents·3 pending applications·233 citations·filing 1991–2021
92Inventor score
Top patents by PatentIndex Score
17 records- 0181US6464780B1Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layersFORSCHUNGSZENTRUM JUELICH GMBH·Filed 1999·Granted Oct 15, 2002·73 cites·10 claims
- 0277US5735949AMethod of producing electronic, electrooptical and optical componentsFORSCHUNGSZENTRUM JUELICH GMBH·Filed 1991·Granted Apr 7, 1998·85 cites·11 claims
- 0369US10153343B2Tunnel field-effect transistor and method for producing sameFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2015·Granted Dec 11, 2018·2 cites·19 claims
- 0469US7416965B2Method for producing a strained layer on a substrate and corresponding layer structureFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2004·Granted Aug 26, 2008·14 cites·47 claims
- 0568US7915148B2Method of producing a tensioned layer on a substrateFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2009·Granted Mar 29, 2011·2 cites·3 claims
- 0666US7528058B2Method for producing a contact and electronic component comprising said type of contactFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2004·Granted May 5, 2009·12 cites·29 claims
- 0762US5958505ALayered structure with a silicide layer and process for producing such a layered structureFORSCHUNGSZENTRUM JUELICH GMBH·Filed 1996·Granted Sep 28, 1999·27 cites·5 claims
- 0860US8048220B2Method for producing a strained layer on a substrate and layered structureFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2005·Granted Nov 1, 2011·2 cites·17 claims
- 0958US7615471B2Method for producing a tensioned layer on a substrate, and a layer structureFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2004·Granted Nov 10, 2009·5 cites·63 claims
- 1051US7442657B2Producing stress-relaxed crystalline layer on a substrateFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2004·Granted Oct 28, 2008·3 cites·27 claims
- 1140US2021210348A1Method For Depositing A Crystal Layer At Low Temperatures, In Particular A Photoluminescent IV-IV Layer On An IV Substrate, And An Optoelectronic Component Having Such A LayerFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2021·Application pending·0 cites
- 1239US2015024586A1Method for producing a monocrystalline metal/semiconductor compoundFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2013·Application pending·0 cites
- 1337US7084075B2Method for producing a layer on a substrateFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2002·Granted Aug 1, 2006·2 cites·15 claims
- 1428US5250147AMethod of producing a layer system and a layer system as produced therebyFORSCHUNGSZENTRUM JUELICH GMBH·Filed 1992·Granted Oct 5, 1993·4 cites·13 claims
- 1527US2005217566A1Method for producing one or more monocrystalline layers, each with a different lattice structure, on one plane of a series of layersMANTL SIEGFRIED·Filed 2003·Application pending·0 cites
- 1626US10988858B2Method for depositing a crystal layer at low temperatures, in particular a photoluminescent IV-IV layer on an IV substrate, and an optoelectronic component having such a layerFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2015·Granted Apr 27, 2021·0 cites·18 claims
- 1723US6648987B1Method for producing nanostructures in thin filmsFORSCHUNGSZENTRUM JUELICH GMBH·Filed 1999·Granted Nov 18, 2003·2 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →