Inventor · disambiguated record
Sijung Yoo
Also filed as: YOO SIJUNG
0 granted patents·12 pending applications·0 citations·filing 2024–2025
Files withSAMSUNG ELECTRONICS CO LTD12
Top patents by PatentIndex Score
12 records- 0169US2025185309A1Semiconductor device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0268US2025142835A1Semiconductor device, memory device, and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0368US2025201305A1Vertical non-volatile memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0467US2025126803A1Semiconductor device, and memory apparatus and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0566US2025176186A1Semiconductor device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0663US2025185308A1Semiconductor device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0763US2025126802A1Ferroelectric field effect transistor, memory device, and neural network deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0862US2024428838A1Synapse device including ferroelectric field effect transistor and neural network apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0961US2025126875A1Semiconductor device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1059US2025056844A1Ferroelectric field effect transistor, memory device, and neural network apparatus including gate-interposed layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1158US2024260274A1Memory device implementing multi-bit and memory apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1253US2025248074A1Ferroelectric field effect transistor, memory device, and neural network deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →