Inventor · disambiguated record
Sorin S. Georgescu
Also filed as: GEORGESCU SORIN · GEORGESCU SORIN S · GEORGESCU SORIN STEFAN
36 granted patents·5 pending applications·430 citations·filing 1996–2021
97Inventor score
Files withPOWER INTEGRATIONS INC15CATALYST SEMICONDUCTOR INC14SEMICONDUCTOR COMPONENTS IND6GEORGESCU SORIN S3TRIPATH TECHNOLOGY INC2
Top patents by PatentIndex Score
41 records- 0195US9871510B1Clamp for a hybrid switchPOWER INTEGRATIONS INC·Filed 2016·Granted Jan 16, 2018·12 cites·15 claims
- 0293US7324380B2Method for trimming the temperature coefficient of a floating gate voltage referenceCATALYST SEMICONDUCTOR INC·Filed 2006·Granted Jan 29, 2008·52 cites·21 claims
- 0393US6617642B1Field effect transistor structure for driving inductive loadsTRIPATH TECHNOLOGY INC·Filed 2000·Granted Sep 9, 2003·56 cites·16 claims
- 0492US7323742B2Non-volatile memory integrated circuitCATALYST SEMICONDUCTOR INC·Filed 2005·Granted Jan 29, 2008·24 cites·12 claims
- 0591US5793079ASingle transistor non-volatile electrically alterable semiconductor memory deviceCATALYST SEMICONDUCTOR INC·Filed 1996·Granted Aug 11, 1998·100 cites·31 claims
- 0688US9998115B1Clamp for a hybrid switchPOWER INTEGRATIONS INC·Filed 2017·Granted Jun 12, 2018·4 cites·10 claims
- 0786US10187054B2Clamp for a hybrid switchPOWER INTEGRATIONS INC·Filed 2018·Granted Jan 22, 2019·3 cites·22 claims
- 0885US7547944B2Scalable electrically eraseable and programmable memory (EEPROM) cell arrayCATALYST SEMICONDUCTOR INC·Filed 2006·Granted Jun 16, 2009·11 cites·6 claims
- 0985US7149123B2Non-volatile CMOS reference circuitCATALYST SEMICONDUCTOR INC·Filed 2005·Granted Dec 12, 2006·18 cites·20 claims
- 1083US7557641B2Fractional charge pump for step-down DC-DC converterCATALYST SEMICONDUCTOR INC·Filed 2007·Granted Jul 7, 2009·21 cites·28 claims
- 1181US7245536B1Precision non-volatile CMOS reference circuitCATALYST SEMICONDUCTOR INC·Filed 2006·Granted Jul 17, 2007·12 cites·24 claims
- 1279US7602232B2Programmable fractional charge pump for DC-DC converterSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted Oct 13, 2009·16 cites·26 claims
- 1378US8750041B2Scalable electrically erasable and programmable memoryGEORGESCU SORIN S·Filed 2012·Granted Jun 10, 2014·6 cites·18 claims
- 1478US7528436B2Scalable electrically eraseable and programmable memoryCATALYST SEMICONDUCTOR INC·Filed 2006·Granted May 5, 2009·12 cites·20 claims
- 1576US7236046B2LED bias current control using adaptive fractional charge pumpCATALYST SEMICONDUCTOR INC·Filed 2005·Granted Jun 26, 2007·14 cites·23 claims
- 1675US9543396B2Vertical transistor device structure with cylindrically-shaped regionsPOWER INTEGRATIONS INC·Filed 2014·Granted Jan 10, 2017·5 cites·19 claims
- 1773US11824438B2Deadtime adjustment for a power converterPOWER INTEGRATIONS INC·Filed 2019·Granted Nov 21, 2023·2 cites·11 claims
- 1872US11025249B2Clamp for a hybrid switchPOWER INTEGRATIONS INC·Filed 2020·Granted Jun 1, 2021·0 cites·6 claims
- 1971US7920424B2Scalable electrically eraseable and programmable memory (EEPROM) cell arraySEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Apr 5, 2011·4 cites·19 claims
- 2068US10325988B2Vertical transistor device structure with cylindrically-shaped field platesPOWER INTEGRATIONS INC·Filed 2016·Granted Jun 18, 2019·1 cites·20 claims
- 2166US8139408B2Scalable electrically eraseable and programmable memoryGEORGESCU SORIN S·Filed 2008·Granted Mar 20, 2012·5 cites·17 claims
- 2266US7616501B2Method for reducing charge loss in analog floating gate cellSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted Nov 10, 2009·7 cites·19 claims
- 2366US7042380B2Digital potentiometer with resistor binary weighting decodingCATALYST SEMICONDUCTOR INC·Filed 2004·Granted May 9, 2006·12 cites·43 claims
- 2466US6989562B2Non-volatile memory integrated circuitCATALYST SEMICONDUCTOR INC·Filed 2003·Granted Jan 24, 2006·11 cites·10 claims
- 2566US6737713B2Substrate connection in an integrated power circuitTRIPATH TECHNOLOGY INC·Filed 2002·Granted May 18, 2004·12 cites·41 claims
- 2665US10763852B2Clamp for a hybrid switchPOWER INTEGRATIONS INC·Filed 2019·Granted Sep 1, 2020·0 cites·12 claims
- 2765US8093650B2Scalable electrically eraseable and programmable memory (EEPROM) cell arrayGEORGESCU SORIN S·Filed 2009·Granted Jan 10, 2012·3 cites·14 claims
- 2863US7558111B2Non-volatile memory cell in standard CMOS processCATALYST SEMICONDUCTOR INC·Filed 2006·Granted Jul 7, 2009·5 cites·18 claims
- 2958US12446251B2Capacitance networks for enhancing high voltage operation of a high electron mobility transistor and method thereinPOWER INTEGRATIONS INC·Filed 2020·Granted Oct 14, 2025·0 cites·10 claims
- 3055US7633114B2Non-volatile memory integrated circuitSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Dec 15, 2009·2 cites·9 claims
- 3154US11824094B2Silicon carbide junction field effect transistorsPOWER INTEGRATIONS INC·Filed 2021·Granted Nov 21, 2023·0 cites·11 claims
- 3254US2019393314A1Vertical Transistor Device Structure with Cylindrical-Shaped Field PlatesPOWER INTEGRATIONS INC·Filed 2019·Application pending·0 cites
- 3351US12136646B2Coupled polysilicon guard rings for enhancing breakdown voltage in a power semiconductor devicePOWER INTEGRATIONS INC·Filed 2019·Granted Nov 5, 2024·0 cites·32 claims
- 3451US2008278346A1Single-Pin Multi-Bit Digital Circuit ConfigurationEFTIMIE SABIN A·Filed 2007·Application pending·0 cites
- 3549US11316042B2Process and structure for a superjunction devicePOWER INTEGRATIONS INC·Filed 2020·Granted Apr 26, 2022·0 cites·21 claims
- 3647US2024014308A1A die seal ring including a two dimensional electron gas regionPOWER INTEGRATIONS INC·Filed 2021·Application pending·0 cites
- 3743US7682907B2Non-volatile memory integrated circuitSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 23, 2010·0 cites·8 claims
- 3841US9972681B2High voltage vertical semiconductor device with multiple pillars in a racetrack arrangementPOWER INTEGRATIONS INC·Filed 2017·Granted May 15, 2018·0 cites·21 claims
- 3940US2009003074A1Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell ArrayCATALYST SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 4035US7830714B2Non-volatile memory with high reliabilitySEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Nov 9, 2010·0 cites·19 claims
- 4134US2008238513A1Hysteresis Circuit Without Static Quiescent CurrentCATALYST SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →