Inventor · disambiguated record
Soo-Geun Lee
Also filed as: LEE SOO-GEUN
25 granted patents·6 pending applications·409 citations·filing 1996–2009
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD27KOREA ADVANCED INST SCI & TECH2SAMSUNG ELECRTONICS CO LTD1SAMUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
31 records- 0194US6861686B2Structure of a CMOS image sensor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 1, 2005·103 cites·14 claims
- 0286US7205666B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 17, 2007·10 cites·10 claims
- 0385US6828229B2Method of manufacturing interconnection line in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 7, 2004·33 cites·18 claims
- 0480US6861347B2Method for forming metal wiring layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 1, 2005·31 cites·54 claims
- 0578US6329276B1Method of forming self-aligned silicide in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 11, 2001·44 cites·13 claims
- 0677US7605472B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 20, 2009·5 cites·11 claims
- 0776US7183195B2Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic fillerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 27, 2007·24 cites·51 claims
- 0873US6815331B2Method for forming metal wiring layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·20 cites·17 claims
- 0972US7400003B2Structure of a CMOS image sensor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 15, 2008·12 cites·35 claims
- 1072US5888317AHydrogen-storage material employing ti-mn alloy systemKOREA ADVANCED INST SCI & TECH·Filed 1996·Granted Mar 30, 1999·22 cites·4 claims
- 1171US7560332B2Integrated circuit capacitor structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·4 cites·14 claims
- 1271US7037835B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECRTONICS CO LTD·Filed 2003·Granted May 2, 2006·13 cites·17 claims
- 1370US6953745B2Void-free metal interconnection structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 11, 2005·17 cites·20 claims
- 1469US7446033B2Method of forming a metal interconnection of a semiconductor device, and metal interconnection formed by such methodSAMUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·4 cites·40 claims
- 1564US7279733B2Dual damascene interconnection with metal-insulator-metal-capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 9, 2007·10 cites·20 claims
- 1664US6855629B2Method for forming a dual damascene wiring pattern in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·12 cites·18 claims
- 1763US7399700B2Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricatingSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 15, 2008·2 cites·15 claims
- 1863US6849536B2Inter-metal dielectric patterns and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·12 cites·28 claims
- 1962US7462507B2Structure of a CMOS image sensor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 9, 2008·7 cites·12 claims
- 2060US7022600B2Method of forming dual damascene interconnection using low-k dielectric materialSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 4, 2006·10 cites·12 claims
- 2158US6936533B2Method of fabricating semiconductor devices having low dielectric interlayer insulation layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 30, 2005·6 cites·18 claims
- 2256US7951712B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 31, 2011·0 cites·16 claims
- 2347US7041592B2Method for forming a metal interconnection layer of a semiconductor device using a modified dual damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 9, 2006·2 cites·23 claims
- 2445US7229875B2Integrated circuit capacitor structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 12, 2007·1 cites·21 claims
- 2542US2006289999A1Selective copper alloy interconnections in semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2641US2007059923A1Methods of fabricating damascene interconnection line in semiconductor devices and semiconductor devices fabricated using such methodsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2741US2006154465A1Method for fabricating interconnection line in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2836US5857139AProcess for preparing an electrode for secondary battery employing hydrogen-storage alloyKOREA ADVANCED INST SCI & TECH·Filed 1996·Granted Jan 5, 1999·5 cites·5 claims
- 2936US2002033486A1Method for forming an interconnection line using a hydrosilsesquioxane (HSQ) layer as an interlayer insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
- 3035US2001018273A1Method of fabricating copper interconnecting lineSAMSUNG ELECTRONICS CO LTD·Filed 2000·Application pending·0 cites
- 3129US2001005630A1Method of filling gap by use of high density plasma oxide film and deposition apparatus thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Soo-Geun Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →