Inventor · disambiguated record
Srabanti Chowdhury
Also filed as: CHOWDHURY SRABANTI
29 granted patents·6 pending applications·487 citations·filing 2010–2023
97Inventor score
Files withTRANSPHORM INC15UNIV LELAND STANFORD JUNIOR6UNIV CALIFORNIA4MISHRA UMESH3UNIV ARIZONA STATE2
Top patents by PatentIndex Score
35 records- 0198US8803246B2Semiconductor electronic components with integrated current limitersWU YIFENG·Filed 2012·Granted Aug 12, 2014·38 cites·32 claims
- 0298US8742460B2Transistors with isolation regionsMISHRA UMESH·Filed 2010·Granted Jun 3, 2014·51 cites·20 claims
- 0397US9443938B2III-nitride transistor including a p-type depleting layerTRANSPHORM INC·Filed 2014·Granted Sep 13, 2016·27 cites·10 claims
- 0497US8901604B2Semiconductor devices with guard ringsMISHRA UMESH·Filed 2011·Granted Dec 2, 2014·42 cites·41 claims
- 0596US10043896B2III-Nitride transistor including a III-N depleting layerTRANSPHORM INC·Filed 2017·Granted Aug 7, 2018·12 cites·20 claims
- 0696US9842922B2III-nitride transistor including a p-type depleting layerTRANSPHORM INC·Filed 2016·Granted Dec 12, 2017·12 cites·20 claims
- 0796US9634100B2Semiconductor devices with integrated hole collectorsTRANSPHORM INC·Filed 2015·Granted Apr 25, 2017·12 cites·8 claims
- 0896US9443849B2Semiconductor electronic components with integrated current limitersTRANSPHORM INC·Filed 2015·Granted Sep 13, 2016·12 cites·20 claims
- 0996US9437707B2Transistors with isolation regionsTRANSPHORM INC·Filed 2015·Granted Sep 6, 2016·12 cites·30 claims
- 1096US9171730B2Electrodes for semiconductor devices and methods of forming the sameTRANSPHORM INC·Filed 2014·Granted Oct 27, 2015·24 cites·16 claims
- 1196US8598937B2High power semiconductor electronic components with increased reliabilityLAL RAKESH K·Filed 2011·Granted Dec 3, 2013·55 cites·85 claims
- 1295US9520491B2Electrodes for semiconductor devices and methods of forming the sameTRANSPHORM INC·Filed 2015·Granted Dec 13, 2016·13 cites·21 claims
- 1395US9490324B2N-polar III-nitride transistorsTRANSPHORM INC·Filed 2015·Granted Nov 8, 2016·13 cites·39 claims
- 1495US9147760B2Transistors with isolation regionsTRANSPHORM INC·Filed 2014·Granted Sep 29, 2015·16 cites·11 claims
- 1595US8860495B2Method of forming electronic components with increased reliabilityTRANSPHORM INC·Filed 2013·Granted Oct 14, 2014·17 cites·19 claims
- 1694US9224805B2Semiconductor devices with guard ringsTRANSPHORM INC·Filed 2014·Granted Dec 29, 2015·15 cites·25 claims
- 1794US9184275B2Semiconductor devices with integrated hole collectorsMISHRA UMESH·Filed 2012·Granted Nov 10, 2015·18 cites·24 claims
- 1894US9171836B2Method of forming electronic components with increased reliabilityTRANSPHORM INC·Filed 2014·Granted Oct 27, 2015·15 cites·32 claims
- 1994US9093366B2N-polar III-nitride transistorsTRANSPHORM INC·Filed 2013·Granted Jul 28, 2015·19 cites·39 claims
- 2093US9893174B2III-nitride based N polar vertical tunnel transistorUNIV ARIZONA STATE·Filed 2015·Granted Feb 13, 2018·16 cites·19 claims
- 2193US9171910B2Semiconductor electronic components with integrated current limitersTRANSPHORM INC·Filed 2014·Granted Oct 27, 2015·13 cites·13 claims
- 2288US8937338B2Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layerCHOWDHURY SRABANTI·Filed 2012·Granted Jan 20, 2015·16 cites·19 claims
- 2385US10312361B2Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltageUNIV CALIFORNIA·Filed 2016·Granted Jun 4, 2019·6 cites·19 claims
- 2483US10121657B2Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientationUNIV ARIZONA STATE·Filed 2016·Granted Nov 6, 2018·4 cites·26 claims
- 2579US10903371B2Three dimensional vertically structured MISFET/MESFETL LIVERMORE NAT SECURITY LLC·Filed 2016·Granted Jan 26, 2021·3 cites·24 claims
- 2676US10418475B2Diamond based current aperture vertical transistor and methods of making and using the sameARIZONA BOARD OF REGENTS ON BEHALFOF ARIZONA STATE UNIV·Filed 2017·Granted Sep 17, 2019·4 cites·14 claims
- 2775US9590088B2Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layerUNIV CALIFORNIA·Filed 2014·Granted Mar 7, 2017·2 cites·23 claims
- 2859US2024133027A1Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaNUNIV LELAND STANFORD JUNIOR·Filed 2023·Application pending·0 cites
- 2958US2025194196A1Apparatuses and methods involving semiconductor device with current-blocking layerUNIV LELAND STANFORD JUNIOR·Filed 2023·Application pending·0 cites
- 3053US12412744B2Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealingUNIV LELAND STANFORD JUNIOR·Filed 2020·Granted Sep 9, 2025·0 cites·30 claims
- 3152US2022165905A1Devices and methods involving diamond-based photoconductive structuresUNIV LELAND STANFORD JUNIOR·Filed 2021·Application pending·0 cites
- 3247US11961837B2Semiconductor apparatuses and methods involving diamond and GaN-based FET structuresUNIV LELAND STANFORD JUNIOR·Filed 2022·Granted Apr 16, 2024·0 cites·25 claims
- 3345US2025233043A1Devices and methods involving grown diamond in a temperature field plateUNIV LELAND STANFORD JUNIOR·Filed 2022·Application pending·0 cites
- 3438US2023031266A1Methods and apparatuses involving diamond growth on ganUNIV CALIFORNIA·Filed 2021·Application pending·0 cites
- 3536US2019115448A1Iii-nitride vertical transistor with aperture region formed using ion implantationUNIV CALIFORNIA·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →