Inventor · disambiguated record
Srikant Jayanti
Also filed as: JAYANTI SRIKANT
17 granted patents·1 pending application·137 citations·filing 2013–2024
94Inventor score
Top patents by PatentIndex Score
18 records- 0196US9412821B2Stacked thin channels for boost and leakage improvementINTEL CORP·Filed 2015·Granted Aug 9, 2016·15 cites·20 claims
- 0295US9230986B23D memoryMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 5, 2016·13 cites·20 claims
- 0395US9209199B2Stacked thin channels for boost and leakage improvementINTEL CORP·Filed 2014·Granted Dec 8, 2015·25 cites·16 claims
- 0495US8946807B23D memoryMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 3, 2015·25 cites·32 claims
- 0594US10170639B23D memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 1, 2019·10 cites·21 claims
- 0694US9275909B2Methods of fabricating semiconductor structuresMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 1, 2016·17 cites·20 claims
- 0793US10103160B2Semiconductor structures including dielectric materials having differing removal ratesMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 16, 2018·8 cites·20 claims
- 0892US9064970B2Memory including blocking dielectric in etch stop tierMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 23, 2015·11 cites·17 claims
- 0989US9559109B2Memory including blocking dielectric in etch stop tierMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 31, 2017·5 cites·18 claims
- 1088US11063059B2Semiconductor structures including dielectric materials having differing removal ratesMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 13, 2021·3 cites·20 claims
- 1187US12477735B2Apparatuses including insulative structures of stack structures having different portions and related memory devicesLODESTAR LICENSING GROUP LLC·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1281US10170491B2Memory including blocking dielectric in etch stop tierMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 1, 2019·2 cites·17 claims
- 1376US11889693B2Semiconductor devices including stack oxide materials having different densities or different oxide portions, and semiconductor devices including stack dielectric materials having different portionsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 30, 2024·0 cites·18 claims
- 1469US10622450B2Modified floating gate and dielectric layer geometry in 3D memory arraysINTEL CORP·Filed 2018·Granted Apr 14, 2020·1 cites·15 claims
- 1568US10290642B2Flash memory devices incorporating a polydielectric layerINTEL CORP·Filed 2017·Granted May 14, 2019·2 cites·20 claims
- 1662US10847527B2Memory including blocking dielectric in etch stop tierMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 24, 2020·0 cites·21 claims
- 1755US10903219B2Method for making a flash memory deviceINTEL CORP·Filed 2019·Granted Jan 26, 2021·0 cites·11 claims
- 1842US2023395729A1Memory devices with gradient-doped control gate materialINTEL CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →