Inventor · disambiguated record
Srinath Krishnan
Also filed as: KRISHNAN SRINATH
51 granted patents·1 pending application·1,720 citations·filing 1997–2015
99Inventor score
Top patents by PatentIndex Score
52 records- 0196US6060364AFast Mosfet with low-doped source/drainADVANCED MICRO DEVICES INC·Filed 1999·Granted May 9, 2000·143 cites·17 claims
- 0295US6548361B1SOI MOSFET and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 15, 2003·84 cites·14 claims
- 0395US6087208AMethod for increasing gate capacitance by using both high and low dielectric gate materialADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·137 cites·9 claims
- 0494US6955969B2Method of growing as a channel region to reduce source/drain junction capacitanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 18, 2005·89 cites·16 claims
- 0594US6611023B1Field effect transistor with self alligned double gate and method of forming sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 26, 2003·83 cites·9 claims
- 0694US6509613B1Self-aligned floating body control for SOI device through leakage enhanced buried oxideADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·88 cites·15 claims
- 0793US6184112B1Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profileADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 6, 2001·136 cites·9 claims
- 0890US6512244B1SOI device with structure for enhancing carrier recombination and method of fabricating sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 28, 2003·60 cites·12 claims
- 0988US6466082B1Circuit technique to deal with floating body effectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·49 cites·22 claims
- 1088US6204138B1Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effectsADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 20, 2001·71 cites·19 claims
- 1187US6713819B1SOI MOSFET having amorphized source drain and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 30, 2004·45 cites·13 claims
- 1284US7071044B1Method of making a test structure for gate-body current and direct extraction of physical gate length using conventional CMOSADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 4, 2006·30 cites·18 claims
- 1384US6238960B1Fast MOSFET with low-doped source/drainADVANCED MICRO DEVICES INC·Filed 2000·Granted May 29, 2001·29 cites·8 claims
- 1483US7626242B2Shallow trench isolation process utilizing differential linersADVANCED MICRO DEVICES INC·Filed 2008·Granted Dec 1, 2009·8 cites·20 claims
- 1583US6498371B1Body-tied-to-body SOI CMOS inverter circuitADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 24, 2002·32 cites·10 claims
- 1683US6399452B1Method of fabricating transistors with low thermal budgetADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 4, 2002·28 cites·11 claims
- 1782US7132683B1Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologiesADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 7, 2006·26 cites·7 claims
- 1882US6495887B1Argon implantation after silicidation for improved floating-body effectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 17, 2002·26 cites·18 claims
- 1982US6429083B1Removable spacer technology using ion implantation to augment etch rate differences of spacer materialsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·32 cites·31 claims
- 2082US6420767B1Capacitively coupled DTMOS on SOIADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 16, 2002·30 cites·28 claims
- 2182US6100558ASemiconductor device having enhanced gate capacitance by using both high and low dielectric materialsADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·43 cites·22 claims
- 2282US5960322ASuppression of boron segregation for shallow source and drain junctions in semiconductorsADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 28, 1999·64 cites·11 claims
- 2381US6589823B1Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plugADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 8, 2003·29 cites·18 claims
- 2481US6492209B1Selectively thin silicon film for creating fully and partially depleted SOI on same waferADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 10, 2002·28 cites·14 claims
- 2581US6429054B1Method of fabricating semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctionsADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 6, 2002·25 cites·12 claims
- 2679US6518631B1Multi-Thickness silicide device formed by succesive spacersADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·25 cites·15 claims
- 2778US6441433B1Method of making a multi-thickness silicide SOI deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·24 cites·15 claims
- 2875US6465847B1Semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctionsADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·20 cites·17 claims
- 2972US6462381B1Silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device with backside contact openingADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 8, 2002·19 cites·5 claims
- 3072US6362063B1Formation of low thermal budget shallow abrupt junctions for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 26, 2002·41 cites·12 claims
- 3171US7122863B1SOI device with structure for enhancing carrier recombination and method of fabricating sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 17, 2006·17 cites·13 claims
- 3270US6566213B2Method of fabricating multi-thickness silicide device formed by disposable spacersADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·15 cites·16 claims
- 3370US6342423B1MOS-type transistor processing utilizing UV-nitride removable spacer and HF etchADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 29, 2002·16 cites·19 claims
- 3469US6541821B1SOI device with source/drain extensions and adjacent shallow pocketsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 1, 2003·14 cites·11 claims
- 3569US6407428B1Field effect transistor with a buried and confined metal plate to control short channel effectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 18, 2002·12 cites·6 claims
- 3668US10496291B2Maintaining data integrity during data migrationSAP SE·Filed 2015·Granted Dec 3, 2019·3 cites·17 claims
- 3767US7045433B1Tip architecture with SPE for buffer and deep source/drain regionsADVANCED MICRO DEVICES INC·Filed 2004·Granted May 16, 2006·10 cites·20 claims
- 3867US6630376B1Body-tied-to-body SOI CMOS inverter circuitADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 7, 2003·13 cites·10 claims
- 3964US6326247B1Method of creating selectively thin silicon/oxide for making fully and partially depleted SOI on same wafferADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 4, 2001·11 cites·20 claims
- 4063US6535015B1Device and method for testing performance of silicon structuresADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·11 cites·16 claims
- 4162US6830987B1Semiconductor device with a silicon-on-void structure and method of making the sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 14, 2004·11 cites·12 claims
- 4261US6727149B1Method of making a hybrid SOI device that suppresses floating body effectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 27, 2004·7 cites·16 claims
- 4361US6359298B1Capacitively coupled DTMOS on SOI for multiple devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 19, 2002·9 cites·19 claims
- 4457US6613643B1Structure, and a method of realizing, for efficient heat removal on SOIADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 2, 2003·7 cites·13 claims
- 4556US7768095B2Shallow trench isolation process utilizing differential linersADVANCED MICRO DEVICES INC·Filed 2009·Granted Aug 3, 2010·0 cites·20 claims
- 4656US6717212B2Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structureADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 6, 2004·5 cites·8 claims
- 4752US7253068B1Dual SOI film thickness for body resistance controlADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 7, 2007·5 cites·14 claims
- 4849US7364962B1Shallow trench isolation process utilizing differential linersADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 29, 2008·2 cites·20 claims
- 4941US2012306021A1Semiconductor device and method of fabricationSAMAVEDAM SRIKANTH·Filed 2011·Application pending·0 cites
- 5040US6274915B1Method of improving MOS device performance by controlling degree of depletion in the gate electrodeADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·6 cites·8 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →