Inventor · disambiguated record
Srikant Sridevan
Also filed as: SRIDEVAN SRIKANT
18 granted patents·960 citations·filing 1996–2011
96Inventor score
Top patents by PatentIndex Score
18 records- 0198US6608350B2High voltage vertical conduction superjunction semiconductor deviceINT RECTIFIER CORP·Filed 2000·Granted Aug 19, 2003·213 cites·22 claims
- 0296US8017978B2Hybrid semiconductor deviceINT RECTIFIER CORP·Filed 2006·Granted Sep 13, 2011·40 cites·14 claims
- 0396US6194741B1MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistanceINT RECTIFIER CORP·Filed 1998·Granted Feb 27, 2001·204 cites·5 claims
- 0495US8368120B2Hybrid semiconductor device having a GaN transistor and a silicon MOSFETINT RECTIFIER CORP·Filed 2011·Granted Feb 5, 2013·20 cites·15 claims
- 0594US6509240B2Angle implant process for cellular deep trench sidewall dopingINT RECTIFIER CORP·Filed 2001·Granted Jan 21, 2003·99 cites·10 claims
- 0692US6512267B2Superjunction device with self compensated trench wallsINT RECTIFIER CORP·Filed 2001·Granted Jan 28, 2003·63 cites·30 claims
- 0791US7767500B2Superjunction device with improved ruggednessSILICONIX TECHNOLOGY C V·Filed 2006·Granted Aug 3, 2010·15 cites·14 claims
- 0890USRE41509EHigh voltage vertical conduction superjunction semiconductor deviceINT RECTIFIER CORP·Filed 2005·Granted Aug 17, 2010·16 cites·29 claims
- 0990US6835993B2Bidirectional shallow trench superjunction device with resurf regionINT RECTIFIER CORP·Filed 2003·Granted Dec 28, 2004·52 cites·18 claims
- 1087US5742076ASilicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistanceUNIV NORTH CAROLINA STATE·Filed 1996·Granted Apr 21, 1998·98 cites·34 claims
- 1186US9478441B1Method for forming a superjunction device with improved ruggednessSRIDEVAN SRIKANT·Filed 2010·Granted Oct 25, 2016·7 cites·20 claims
- 1285US6787872B2Lateral conduction superjunction semiconductor deviceINT RECTIFIER CORP·Filed 2001·Granted Sep 7, 2004·38 cites·28 claims
- 1382US7166890B2Superjunction device with improved ruggednessSRIDEVAN SRIKANT·Filed 2004·Granted Jan 23, 2007·24 cites·6 claims
- 1480US7659588B2Termination for a superjunction deviceSILICONIX TECHNOLOGY C V·Filed 2007·Granted Feb 9, 2010·9 cites·13 claims
- 1572US6812525B2Trench fill processINT RECTIFIER CORP·Filed 2003·Granted Nov 2, 2004·27 cites·16 claims
- 1672US6552363B2Polysilicon FET built on silicon carbide diode substrateINT RECTIFIER CORP·Filed 2001·Granted Apr 22, 2003·15 cites·7 claims
- 1766US6727128B2Method of preparing polysilicon FET built on silicon carbide diode substrateINT RECTIFIER CORP·Filed 2003·Granted Apr 27, 2004·10 cites·4 claims
- 1861US6900537B2High power silicon carbide and silicon semiconductor device packageINT RECTIFIER CORP·Filed 2003·Granted May 31, 2005·10 cites·11 claims
Join the waitlist — get patent alerts
Get an alert when Srikant Sridevan files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →