Inventor · disambiguated record
Steve S. Chung
Also filed as: CHUNG STEVE S
21 granted patents·1 pending application·215 citations·filing 1995–2023
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG8TAIWAN SEMICONDUCTOR MFG CO LTD7UNIV NAT CHIAO TUNG2UNIV NATIONAL CHIAO TUNG2CHUNG STEVE S1
Top patents by PatentIndex Score
22 records- 0187US5573961AMethod of making a body contact for a MOSFET device fabricated in an SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Nov 12, 1996·66 cites·26 claims
- 0284US10127993B2Dielectric fuse memory circuit and operation method thereofUNIV NATIONAL CHIAO TUNG·Filed 2016·Granted Nov 13, 2018·7 cites·30 claims
- 0384US9577078B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 21, 2017·5 cites·20 claims
- 0484US5818085ABody contact for a MOSFET device fabricated in an SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 6, 1998·53 cites·3 claims
- 0583US9548398B2NAND type variable resistance random access memory and methodsUNIV NAT CHIAO TUNG·Filed 2015·Granted Jan 17, 2017·6 cites·10 claims
- 0677US10504721B2Staggered-type tunneling field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 10, 2019·2 cites·14 claims
- 0771US9336869B2Nonvoltile resistance memory and its operation thereofUNIV NAT CHIAO TUNG·Filed 2015·Granted May 10, 2016·2 cites·21 claims
- 0862US11139165B2Staggered-type tunneling field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·0 cites·20 claims
- 0962US11133182B2Staggered-type tunneling field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 1062US11133184B2Staggered-type tunneling field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 1162US11133183B2Staggered-type tunneling field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 1258US5705839AGate spacer to control the base width of a lateral bipolar junction transistor using SOI technologyTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 6, 1998·20 cites·2 claims
- 1355US12387792B2Memory device and operating method thereofTAIWAN SEMICONDUCTOR MEMORY INC·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 1455US6746883B2Direct determination of interface traps in MOS devicesUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jun 8, 2004·7 cites·8 claims
- 1554US6507066B1Highly reliable flash memory structure with halo sourceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 14, 2003·5 cites·27 claims
- 1654US5567631AMethod of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technologyTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Oct 22, 1996·17 cites·18 claims
- 1747US5728613AMethod of using an insulator spacer to form a narrow base width lateral bipolar junction transistorTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 17, 1998·11 cites·22 claims
- 1844US5610087AMethod for fabricating narrow base width lateral bipolar junction transistor, on SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Mar 11, 1997·11 cites·20 claims
- 1940US9735267B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·0 cites·20 claims
- 2035US6087219AHighly reliable flash memory structure with halo sourceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 11, 2000·3 cites·25 claims
- 2132US10756267B2Nonvolatile memory comprising variable resistance transistors and method for operating the sameUNIV NATIONAL CHIAO TUNG·Filed 2018·Granted Aug 25, 2020·0 cites·15 claims
- 2232US2012126197A1Structure and process of basic complementary logic gate made by junctionless transistorsCHUNG STEVE S·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →