Inventor · disambiguated record
Stefano Daffra
Also filed as: DAFFRA STEFANO
3 granted patents·12 citations·filing 1997–1998
61Inventor score
Top patents by PatentIndex Score
3 records- 0138US6027965AMethod of manufacturing an integrated circuit with MOS transistors having high breakdown voltages, and with precision resistorsST MICROELECTRONICS SRL·Filed 1998·Granted Feb 22, 2000·10 cites·19 claims
- 0230US5894065AMethod for improving the intermediate dielectric profile, particularly for non-volatile memoriesSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Apr 13, 1999·2 cites·5 claims
- 0327US6104058AMethod for improving the intermediate dielectric profile, particularly for non-volatile memoriesSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Aug 15, 2000·0 cites·40 claims
Join the waitlist — get patent alerts
Get an alert when Stefano Daffra files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →