Inventor · disambiguated record
Steven Demuynck
Also filed as: DEMUYNCK STEVEN
7 granted patents·7 pending applications·5 citations·filing 2009–2024
72Inventor score
Top patents by PatentIndex Score
14 records- 0176US11107812B2Method of fabricating stacked semiconductor deviceIMEC VZW·Filed 2019·Granted Aug 31, 2021·2 cites·18 claims
- 0270US10090393B2Method for forming a field effect transistor device having an electrical contactIMEC VZW·Filed 2016·Granted Oct 2, 2018·2 cites·19 claims
- 0362US10593765B2Method for forming source/drain contactsIMEC VZW·Filed 2018·Granted Mar 17, 2020·1 cites·20 claims
- 0458US2025133815A1Method for Processing a CFET Device with Non-conformal Gate DielectricIMEC VZW·Filed 2024·Application pending·0 cites
- 0558US2025212495A1Method for forming a semiconductor structureIMEC VZW·Filed 2024·Application pending·0 cites
- 0656US2025151375A1Non-conformal plasma deposited SiN for ISPIMEC VZW·Filed 2024·Application pending·0 cites
- 0755US2023187528A1Method for Forming a Precursor Semiconductor Device StructureIMEC VZW·Filed 2022·Application pending·0 cites
- 0849US11348842B2Split replacement metal gate integrationIMEC VZW·Filed 2020·Granted May 31, 2022·0 cites·15 claims
- 0946US2010207177A1Method for producing a copper contactIMEC·Filed 2009·Application pending·0 cites
- 1042US11430876B2Method for producing self-aligned gate and source/drain via connections for contacting a FET transistorIMEC VZW·Filed 2020·Granted Aug 30, 2022·0 cites·7 claims
- 1141US2020083116A1Gate, Contact, and Fin Cut MethodIMEC VZW·Filed 2019·Application pending·0 cites
- 1234US10043798B2Buried interconnect for semiconductor circuitsIMEC VZW·Filed 2016·Granted Aug 7, 2018·0 cites·13 claims
- 1334US2018174927A1Contacts in Semiconductor DevicesIMEC VZW·Filed 2017·Application pending·0 cites
- 1427US10128124B2Method for blocking a trench portionIMEC VZW·Filed 2015·Granted Nov 13, 2018·0 cites·14 claims
Join the waitlist — get patent alerts
Get an alert when Steven Demuynck files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →