Inventor · disambiguated record
Stanley M. Filipiak
Also filed as: FILIPIAK STANLEY M · FILIPIAK STANLEY MICHAEL
21 granted patents·3 pending applications·1,259 citations·filing 1990–2010
97Inventor score
Top patents by PatentIndex Score
24 records- 0197US5447887AMethod for capping copper in semiconductor devicesMOTOROLA INC·Filed 1994·Granted Sep 5, 1995·312 cites·21 claims
- 0295US6174810B1Copper interconnect structure and method of formationMOTOROLA INC·Filed 1998·Granted Jan 16, 2001·235 cites·13 claims
- 0390US6287951B1Process for forming a combination hardmask and antireflective layerMOTOROLA INC·Filed 1998·Granted Sep 11, 2001·164 cites·20 claims
- 0486US5918147AProcess for forming a semiconductor device with an antireflective layerMOTOROLA INC·Filed 1995·Granted Jun 29, 1999·89 cites·42 claims
- 0583US7422979B2Method of forming a semiconductor device having a diffusion barrier stack and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 9, 2008·14 cites·10 claims
- 0682US6475925B1Reduced water adsorption for interlayer dielectricMOTOROLA INC·Filed 2000·Granted Nov 5, 2002·31 cites·13 claims
- 0780US7442598B2Method of forming an interlayer dielectricFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 28, 2008·10 cites·15 claims
- 0880US6838354B2Method for forming a passivation layer for air gap formationFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jan 4, 2005·24 cites·17 claims
- 0979US5188979AMethod for forming a nitride layer using preheated ammoniaMOTOROLA INC·Filed 1991·Granted Feb 23, 1993·69 cites·9 claims
- 1078US5126283AProcess for the selective encapsulation of an electrically conductive structure in a semiconductor deviceMOTOROLA INC·Filed 1990·Granted Jun 30, 1992·68 cites·15 claims
- 1176US5358901AProcess for forming an intermetallic layerMOTOROLA INC·Filed 1993·Granted Oct 25, 1994·53 cites·36 claims
- 1271US5310626AMethod for forming a patterned layer using dielectric materials as a light-sensitive materialMOTOROLA INC·Filed 1993·Granted May 10, 1994·52 cites·39 claims
- 1370US6686633B1Semiconductor device, memory cell, and processes for forming themMOTOROLA INC·Filed 2000·Granted Feb 3, 2004·16 cites·20 claims
- 1470US6054377AMethod for forming an inlaid via in a semiconductor deviceMOTOROLA INC·Filed 1997·Granted Apr 25, 2000·38 cites·20 claims
- 1564US6284633B1Method for forming a tensile plasma enhanced nitride capping layer over a gate electrodeMOTOROLA INC·Filed 1997·Granted Sep 4, 2001·33 cites·21 claims
- 1664US6184073B1Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or regionMOTOROLA INC·Filed 1997·Granted Feb 6, 2001·27 cites·14 claims
- 1761US7763538B2Dual plasma treatment barrier film to reduce low-k damageFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jul 27, 2010·1 cites·19 claims
- 1858US7157377B2Method of making a semiconductor device using treated photoresistFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 2, 2007·6 cites·19 claims
- 1954US7074713B2Plasma enhanced nitride layerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jul 11, 2006·6 cites·26 claims
- 2047US2011223706A1Method of forming a photodetectorHILDRETH JILL C·Filed 2010·Application pending·0 cites
- 2143US6218733B1Semiconductor device having a titanium-aluminum compoundMOTOROLA INC·Filed 1994·Granted Apr 17, 2001·11 cites·6 claims
- 2242US7592273B2Semiconductor device with hydrogen barrier and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Sep 22, 2009·0 cites·16 claims
- 2341US2007224772A1Method for forming a stressor structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 2441US2007298623A1Method for straining a semiconductor deviceSPENCER GREGORY S·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →